H5TQ2G63BFR-H9C HYNIX SEMICONDUCTOR, H5TQ2G63BFR-H9C Datasheet - Page 60

• Manufacturer Part Number: H5TQ2G63BFR-H9C
• Description: 58T1898
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5TQ2G63BFR-H9C

• Memory Type: SDRAM
• Memory Configuration: 128M X 16
• Access Time: 13.5ns
• Interface Type: CMOS
• Memory Case Style: FBGA
• No. Of Pins: 96
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 2 Gbit
• Rohs Compliant: Yes

Rev. 0.5 / Aug. 2010
Table 4 - IDD1 Measurement-Loop Pattern
a) DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise FLOATING.
b) Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are FLOATING.
0
1
2
3
4
5
6
7
0
1,2
3,4
...
nRCD
...
nRAS
...
1*nRC+0
1*nRC+1,2
1*nRC+3,4
...
1*nRC+nRCD
...
1*nRC+nRAS
...
2*nRC
4*nRC
6*nRC
8*nRC
10*nRC
12*nRC
14*nRC
repeat pattern 1...4 until nRCD - 1, truncate if necessary
repeat pattern 1...4 until nRAS - 1, truncate if necessary
repeat pattern 1...4 until nRC - 1, truncate if necessary
repeat pattern nRC + 1,...4 until nRC + nRCE - 1, truncate if necessary
repeat pattern nRC + 1,...4 until nRC + nRAS - 1, truncate if necessary
repeat pattern nRC + 1,...4 until *2 nRC - 1, truncate if necessary
repeat Sub-Loop 0, use BA[2:0] = 1 instead
repeat Sub-Loop 0, use BA[2:0] = 2 instead
repeat Sub-Loop 0, use BA[2:0] = 3 instead
repeat Sub-Loop 0, use BA[2:0] = 4 instead
repeat Sub-Loop 0, use BA[2:0] = 5 instead
repeat Sub-Loop 0, use BA[2:0] = 6 instead
repeat Sub-Loop 0, use BA[2:0] = 7 instead
PRE
PRE
ACT
D, D
D, D
ACT
D, D
D, D
RD
RD
0
1
1
0
0
0
1
1
0
0
a)
0
0
1
1
0
0
0
1
1
0
1
0
1
0
1
1
0
1
0
1
1
0
1
1
0
1
0
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
00
00
00
00
00
00
00
00
00
00
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
F
F
F
F
F
H5TQ2G63BFR
0
0
0
0
0
0
0
0
0
0
00000000
00110011
Data
-
-
-
-
-
-
-
-
b)
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