H5TQ2G63BFR-H9C HYNIX SEMICONDUCTOR, H5TQ2G63BFR-H9C Datasheet - Page 32

• Manufacturer Part Number: H5TQ2G63BFR-H9C
• Description: 58T1898
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5TQ2G63BFR-H9C

• Memory Type: SDRAM
• Memory Configuration: 128M X 16
• Access Time: 13.5ns
• Interface Type: CMOS
• Memory Case Style: FBGA
• No. Of Pins: 96
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 2 Gbit
• Rohs Compliant: Yes

Rev. 0.5 / Aug. 2010
3. ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must not be greater than
VIN, VOUT Voltage on any pin relative to Vss
Symbol
0.6XVDDQ,When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.
VDDQ
TSTG
This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
conditions, please refer to JESD51-2 standard.
VDD
Voltage on VDD pin relative to Vss
Voltage on VDDQ pin relative to Vss
Storage Temperature
Parameter
- 0.4 V ~ 1.975 V
- 0.4 V ~ 1.975 V
- 0.4 V ~ 1.975 V
-55 to +100
Rating
Units
V
V
V
H5TQ2G63BFR
Notes
, 2
,3
,3
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