EPM1270F256C3 Altera, EPM1270F256C3 Datasheet - Page 54
![IC MAX II CPLD 1270 LE 256-FBGA](/photos/6/70/67063/544-256-fbga_sml.jpg)
EPM1270F256C3
Manufacturer Part Number
EPM1270F256C3
Description
IC MAX II CPLD 1270 LE 256-FBGA
Manufacturer
Altera
Series
MAX® IIr
Specifications of EPM1270F256C3
Programmable Type
In System Programmable
Delay Time Tpd(1) Max
6.2ns
Voltage Supply - Internal
2.5V, 3.3V
Number Of Logic Elements/blocks
1270
Number Of Macrocells
980
Number Of I /o
212
Operating Temperature
0°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
256-FBGA
Voltage
2.5V, 3.3V
Memory Type
FLASH
Number Of Logic Elements/cells
1270
Family Name
MAX II
# Macrocells
980
Frequency (max)
3.01205GHz
Propagation Delay Time
6.2ns
Number Of Logic Blocks/elements
127
# I/os (max)
212
Operating Supply Voltage (typ)
2.5/3.3V
In System Programmable
Yes
Operating Supply Voltage (min)
2.375V
Operating Supply Voltage (max)
3.6V
Operating Temp Range
0C to 85C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
256
Package Type
FBGA
For Use With
544-2380 - KIT DEV MAXII W/EPM 1270N
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Features
-
Lead Free Status / Rohs Status
Not Compliant
Other names
544-1321
EPM1270F256C3
EPM1270F256C3
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EPM1270F256C3N
Manufacturer:
ALTERA
Quantity:
162
Part Number:
EPM1270F256C3N
Manufacturer:
ALTERA/阿尔特拉
Quantity:
20 000
4–4
Figure 4–2. Transistor-Level Diagram of MAX II Device I/O Buffers
Figure 4–3. ESD Protection During Positive Voltage Zap
MAX II Device Handbook
n+
The CMOS output drivers in the I/O pins intrinsically provide electrostatic discharge
(ESD) protection. There are two cases to consider for ESD voltage strikes: positive
voltage zap and negative voltage zap.
A positive ESD voltage zap occurs when a positive voltage is present on an I/O pin
due to an ESD charge event. This can cause the N+ (Drain)/ P-Substrate junction of
the N-channel drain to break down and the N+ (Drain)/P-Substrate/N+ (Source)
intrinsic bipolar transistor turn on to discharge ESD current from I/O pin to GND.
The dashed line (see
positive ESD zap.
IOE Signal
p - well
I/O
n+
GND
VPAD
Figure
Source
Drain
Drain
Source
PMOS
NMOS
4–3) shows the ESD current discharge path during a
Larger of VCCIO or VPAD
p+
IOE Signal or the
Gate
Gate
Chapter 4: Hot Socketing and Power-On Reset in MAX II Devices
n - well
Hot Socketing Feature Implementation in MAX II Devices
P-Substrate
VCCIO
p+
p - substrate
N+
N+
VCCIO or VPAD
The Larger of
D
S
n+
GND
I/O
G
© October 2008 Altera Corporation
Ensures 3.3-V
Tolerance and
Hot-Socket
Protection