MT45W256KW16BEGB-708 WT Micron Technology Inc, MT45W256KW16BEGB-708 WT Datasheet - Page 53

• Manufacturer Part Number: MT45W256KW16BEGB-708 WT
• Manufacturer: Micron Technology Inc

Specifications of MT45W256KW16BEGB-708 WT

• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 45:
PDF: 09005aef8329f3e3 / Source: 09005aef82e419a5
8mb_4mb_burst_cr1_0_p22z__2.fm - Rev. B 4/ 08 EN
DQ[15:0]
LB#/UB#
A[17:0]
IN/OUT
ADV#
WAIT
WE#
OE#
CLK
CE#
Burst READ Followed by Asynchronous WRITE (WE#-Controlled)
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IH
IH
IH
IH
IH
IH
OH
OL
OH
OL
IL
IL
IL
IL
IL
IL
IL
Notes:
READ burst identified
Valid address
t SP
t CSP
(WE# = HIGH)
t SP
t SP
t SP
t CEW
1. When configured for synchronous mode (BCR[15] = 0), a refresh opportunity must be pro-
vided every
tions: clocked CE# HIGH or CE# HIGH for greater than 15ns. Note that CellularRAM
Workgroup specification 1.0 requires CE# to be clocked HIGH to terminate the burst.
t HD
t HD
t HD
High-Z
4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory
t ABA
t
CEM. A refresh opportunity is satisfied by either of the following two condi-
t ACLK
t OLZ
t BOE
t KHTL
t CLK
Valid output
53
t HD
t KOH
t OHZ
t HZ
t CBPH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
High-Z
1
t CEW
t AS
Valid address
t CW
t BW
Don’t Care
t AW
t WP
t WC
©2008 Micron Technology, Inc. All rights reserved.
Valid input
Timing Diagrams
t DW
t HZ
Undefined
t WR
t WPH
t DH