MT45W256KW16BEGB-708 WT Micron Technology Inc, MT45W256KW16BEGB-708 WT Datasheet - Page 17

• Manufacturer Part Number: MT45W256KW16BEGB-708 WT
• Manufacturer: Micron Technology Inc

Specifications of MT45W256KW16BEGB-708 WT

• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Low-Power Operation
Standby Mode Operation
Deep Power-Down Operation
PDF: 09005aef8329f3e3 / Source: 09005aef82e419a5
8mb_4mb_burst_cr1_0_p22z__2.fm - Rev. B 4/ 08 EN
During standby, the device current consumption is reduced to the level necessary to
perform the DRAM REFRESH operation. Standby operation occurs when CE# is HIGH.
The device will enter a reduced power state upon completion of a READ or WRITE oper-
ation or when the address and control inputs remain static for an extended period of
time. This mode will continue until a change occurs to the address or control inputs.
Deep power-down (DPD) operation disables all refresh-related activity. This mode is
used if the system does not require the storage provided by the CellularRAM device. Any
stored data will become corrupted when DPD is enabled. When refresh activity has been
reenabled by rewriting the RCR, the CellularRAM device will require 150µs to perform an
initialization procedure before normal operations can resume. During this 150µs period,
the current consumption will be higher than the specified standby levels, but consider-
ably lower than the active current specification.
DPD cannot be enabled or disabled by writing to the RCR using the software-access
sequence; instead, the RCR should be accessed using CRE.
4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
Low-Power Operation
©2008 Micron Technology, Inc. All rights reserved.