MT45W256KW16BEGB-708 WT Micron Technology Inc, MT45W256KW16BEGB-708 WT Datasheet - Page 50

• Manufacturer Part Number: MT45W256KW16BEGB-708 WT
• Manufacturer: Micron Technology Inc

Specifications of MT45W256KW16BEGB-708 WT

• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 42:
PDF: 09005aef8329f3e3 / Source: 09005aef82e419a5
8mb_4mb_burst_cr1_0_p22z__2.fm - Rev. B 4/ 08 EN
DQ[15:0]
LB#/UB#
IN/OUT
A[17:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
OH
OL
IH
IH
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
IL
High-Z
Burst WRITE Followed by Burst READ
t CSP
t SP
t SP t HD
t SP
address
Valid
Notes:
t HD
t HD
High-Z
1. Nondefault BCR settings for burst WRITE followed by burst READ: latency code 2 (3 clocks);
2. When configured for synchronous mode (BCR[15] = 0), a refresh opportunity must be pro-
t CLK
WAIT active LOW; WAIT asserted during delay.
vided every
tions: clocked CE# HIGH or CE# HIGH for greater than 15ns. Note that the CellularRAM
Workgroup 1.0 specification requires CE# to be clocked HIGH to terminate the burst.
t SP
t SP
D[0]
t HD
t HD
4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory
t
D[1]
CEM. A refresh opportunity is satisfied by either of the following two condi-
D[2]
D[3]
t HD
50
t CBPH
2
t CSP
t SP
t SP
t SP
t SP t HD
V
V
address
Valid
OH
OL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t HD
t HD
High-Z
t ABA
t ACLK
t BOE
output
Valid
t KOH
output
©2008 Micron Technology, Inc. All rights reserved.
Valid
Timing Diagrams
Don’t Care
output
Valid
output
Valid
t OHZ
Undefined
High-Z