MT48LC16M16LFFG Micron Technology Inc, MT48LC16M16LFFG Datasheet - Page 39

• Manufacturer Part Number: MT48LC16M16LFFG
• Manufacturer: Micron Technology Inc

Specifications of MT48LC16M16LFFG

• Lead Free Status / Rohs Status: Not Compliant

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(Notes: 1, 5, 6, 11, 13; notes appear on page 40; V
V
256Mb: x16 Mobile SDRAM
MobileRamY26L_B.p65 – Pub. 04/03
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(Notes: 1, 6, 11, 13; notes appear on page 40)V
V
PARAMETER/CONDITION
OPERATING CURRENT: Active Mode;
Burst = 2; READ or WRITE;
STANDBY CURRENT: Power-Down Mode;
All banks idle; CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH;
All banks active after
OPERATING CURRENT: Burst Mode; Continuous burst;
READ or WRITE; All banks active
AUTO REFRESH CURRENT
CKE = HIGH; CS# = HIGH
DD
DEEP POWER DOWN
DD
DD
DD
Temperature Compensated Self Refresh
Parameter/Condition
Self Refresh Current: CKE < 0.2V
Q = 1.8V ±0.2V)
/V
7
SPECIFICATIONS AND CONDITIONS
DD
- SELF REFRESH CURRENT OPTIONS (Temperature Compensated Self Refresh)
Q = 1.8V ±0.15V)
t
RCD met; No accesses in progress
t
RC =
t
RC (MIN)
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Temperature
/V
DD
DD
/V
t
t
Max
85°C
45°C
RFC =
RFC = 7.8µs
Q = 3.3 ±0.3V or V
DD
39
Q = 3.3 ±0.3V; V
t
RFC (MIN)
750
500
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-8
DD
DD
S Y M B O L
/V
= 2.5V ±0.2V V
DD
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I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
Q = 2.5V ±0.2V or
1
2
3
4
5
6
8
-10
750
500
MOBILE SDRAM
500
105
165
2.5
75
25
10
- 8
MAX
©2003 Micron Technology, Inc. All rights reserved.
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256Mb: x16
- 1 0 U N I T S NOTES
500
155
2.5
70
25
95
10
Q = 2.5V ±0.2V or
PRELIMINARY
UNITS
µA
µA
mA
mA
mA
mA
mA
µA
µA
NOTES
18, 19,
19, 32
19, 32
19, 32
32, 33
3, 18,
3, 12,
3, 18,
3, 12,
4
4
32
34