MT48LC16M16LFFG Micron Technology Inc, MT48LC16M16LFFG Datasheet - Page 35

• Manufacturer Part Number: MT48LC16M16LFFG
• Manufacturer: Micron Technology Inc

Specifications of MT48LC16M16LFFG

• Lead Free Status / Rohs Status: Not Compliant

DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS - LC version
(Notes: 1, 5, 6; notes appear on page 40; V
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS - V version
(Notes: 1, 5, 6; notes appear on page 40; V
256Mb: x16 Mobile SDRAM
MobileRamY26L_B.p65 – Pub. 04/03
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on Inputs, NC or I/O Pins
Operating Temperature,
Storage Temperature (plastic) ............ -55°C to +150°C
Power Dissipation ........................................................ 1 W
SUPPLY VOLTAGE
I/O SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
DATA OUTPUT HIGH VOLTAGE: Logic 1; All inputs
DATA OUTPUT LOW VOLTAGE: LOGIC 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V ≤ V
OUTPUT LEAKAGE CURRENT: DQs are disabled; 0V ≤ V
SUPPLY VOLTAGE
I/O SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
DATA OUTPUT HIGH VOLTAGE: Logic 1; All inputs
DATA OUTPUT LOW VOLTAGE: LOGIC 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V ≤ V
OUTPUT LEAKAGE CURRENT: DQs are disabled; 0V ≤ V
PARAMETER/CONDITION
PARAMETER/CONDITION
T
T
A
A
(commercial) ..................................... 0°C to +70°C
(industrial; IT parts) .................... -40°C to +85°C
Relative to V
Relative to V
Relative to V
Relative to V
Relative to V
Relative to V
DD
/V
IN
IN
DD
SS
SS
SS
SS
SS
SS
≤ V
≤ V
(3.3V) ........................ -1V to +4.6V
(2.5V) ..................... -0.5V to +3.6V
(1.8V) .................. -0.35V to +2.8V
(3.3V) ........................ -1V to +4.6V
(2.5V) ..................... -0.5V to +3.6V
(1.8V) .................. -0.35V to +2.8V
Q Supply
DD
DD
(All other pins not under test = 0V)
(All other pins not under test = 0V)
DD
DD
/V
= +2.5V ±0.2V V
DD
Q = 3.3 ±0.3V)
OUT
OUT
35
≤ V
≤ V
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DD
DD
DD
Q
Q
Q = +2.5V ±0.2V or V
SYMBOL
SYMBOL
V
V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
V
V
V
V
V
V
V
V
V
I
I
DDQ
DDQ
OZ
OZ
I
I
OH
OH
OL
OL
IH
IH
DD
IL
I
DD
IL
I
0.8 * V
V
DD
MIN
MIN
1.65
-0.3
-0.3
2.3
-5
-5
-5
-5
2.4
Q - 0.2
3
3
2
–
–
DD
MOBILE SDRAM
QV
DD
V
Q = +1.8V ±0.15V)
DD
DD
©2003 Micron Technology, Inc. All rights reserved.
MAX
MAX
Q + 0.3
Q + 0.3
3.6
3.6
0.8
0.4
2.7
2.7
0.3
0.2
256Mb: x16
–
5
5
–
5
5
PRELIMINARY
UNITS NOTES
UNITS NOTES
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V
22
22
22
22