MT28C6428P20FM-80 TET Micron Technology Inc, MT28C6428P20FM-80 TET Datasheet - Page 7

• Manufacturer Part Number: MT28C6428P20FM-80 TET
• Manufacturer: Micron Technology Inc

Specifications of MT28C6428P20FM-80 TET

• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

TRUTH TABLE – FLASH
TRUTH TABLE – SRAM
NOTE: 1. Two devices may not drive the memory bus at the same time.
4 Meg x 16 Asynchronous/Page Flash 512K x 16 SRAM Combo Memory
MT28C6428P20_4.p65 – Rev. 4, Pub. 10/02
MODES
Read
Write
Standby
Output Disable
Reset
MODES
Read
Write
Standby
Output Disable
DQ0–DQ15
DQ0–DQ7
DQ8–DQ15
DQ0–DQ15
DQ0–DQ7
DQ8–DQ15
10. Data input on upper byte only.
2. Allowable Flash read modes include read array, read query, read configuration, and read status.
3. Outputs are dependent on a separate device controlling bus outputs.
4. Modes of the Flash and SRAM can be interleaved so that while one is disabled, the other controls outputs.
5. SRAM is enabled and/or disabled with the logical function: S_CE1# or S_CE2.
6. Simultaneous operations can exist, as long as the operations are interleaved such that only one device attempts to
7. Data output on lower byte only; upper byte High-Z.
8. Data output on upper byte only; lower byte High-Z.
9. Data input on lower byte only.
control the bus outputs at a time.
F_RP# F_CE# F_OE# F_WE# S_CE1# S_CE2 S_OE# S_WE# S_UB# S_LB#
F_RP# F_CE# F_OE# F_WE# S_CE1# S_CE2 S_OE# S_WE# S_UB# S_LB#
Flash any mode allowable
H
H
H
H
L
Flash must be High-Z
FLASH SIGNALS
FLASH SIGNALS
H
X
L
L
L
H
X
H
X
L
H
X
L
X
H
H
X
L
L
L
L
L
L
L
4 MEG x 16 ASYNCHRONOUS/PAGE FLASH
SRAM any mode allowable
H
H
H
H
H
H
X
H
L
SRAM must be High-Z
SRAM SIGNALS
SRAM SIGNALS
512K x 16 SRAM COMBO MEMORY
7
X
L
L
L
H
H
H
X
X
H
H
H
X
X
X
L
L
L
H
H
X
X
X
L
L
L
L
Micron Technology, Inc., reserves the right to change products or specifications without notice.
L
L
H
L
L
H
X
X
X
BUS CONTROL
BUS CONTROL
MEMORY
MEMORY
Other
Other
Other
Other
SRAM
SRAM
SRAM
SRAM
SRAM
SRAM
Other
Other
Flash
Flash
MEMORY OUPUT
MEMORY OUPUT
DQ0–DQ15
DQ0–DQ15
D
D
High-Z
High-Z
High-Z
D
D
High-Z
High-Z
High-Z
D
D
OUT
OUT
D
D
IN
IN
OUT
OUT
©2002, Micron Technology, Inc.
IN
IN
UB
LB
UB
LB
NOTES
NOTES
1, 2, 3
4, 5
4, 6
1, 3
1, 3
10
1
4
7
8
9
4
4
4