MT28C6428P20FM-80 TET Micron Technology Inc, MT28C6428P20FM-80 TET Datasheet - Page 40

• Manufacturer Part Number: MT28C6428P20FM-80 TET
• Manufacturer: Micron Technology Inc

Specifications of MT28C6428P20FM-80 TET

• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

4 Meg x 16 Asynchronous/Page Flash 512K x 16 SRAM Combo Memory
MT28C6428P20_4.p65 – Rev. 4, Pub. 10/02
OFFSET
2A, 2B
19, 1A
2D, 2E
02–0F
10, 11
13, 14
15, 16
17, 18
2F, 30
31, 32
33, 34
35, 36
1D
00
01
12
1B
1C
1E
1F
20
21
22
23
24
25
26
27
28
29
2C
0003, 0000
0039, 0000
0000, 0000
0000, 0000
0000, 0000
5F00, 0001
0007, 0000
0000, 0001
0020, 0000
000E, 0000
0000, 0001
0007, 0000
5F00, 0001
0051,0052
reserved
DATA
00B4
000C
0059
0017
0022
00C6
0003
0000
0009
0000
0000
0003
0000
0017
0001
0000
0003
2Ch
B6h
B7h
Manufacturer code
Top boot block device code
Bottom boot block device code
Reserved
“QR”
“Y”
Primary OEM command set
Address for primary extended table
Alternate OEM command set
Address for OEM extended table
F_V
F_V
F_V
F_V
Typical timeout for single byte/word program, 2
Typical timeout for maximum size multiple byte/word program, 2
supported
Typical timeout for individual block erase, 2
Typical timeout for full chip erase, 2
Maximum timeout for single byte/word program, 2
Maximum timeout for maximum size multiple byte/word program, 2
supported
Maximum timeout for individual block erase, 2
Maximum timeout for full chip erase, 2
Device size, 2
Bus interface x8 = 0, x16 = 1, x8/x16 = 2
Flash device interface description 0000 = async
Maximum number of bytes in multibyte program or page, 2
Number of erase block regions within device (4K words and 32K words)
Top boot block device erase block region information 1, 8 blocks …
Bottom boot block device erase block region information 1, 8 blocks …
Erase block region information 1, 8 blocks …
…of 8KB
15 blocks of ….
……64KB
Top boot block device ……96KB blocks of
Bottom boot block device ……96KB blocks of
PP
CC
CC
PP
MAX for Erase/Write; Bit7–Bit4 Volts in Hex; Bit3–Bit0 100mV in BCD, 0000 = F_V
MIN for Erase/Write; Bit7–Bit4 Volts in Hex; Bit3–Bit0 100mV in BCD
MIN for Erase/Write; Bit7–Bit4 Volts in BCD; Bit3–Bit0 100mV in BCD
MAX for Erase/Write; Bit7–Bit4 Volts in BCD; Bit3–Bit0 100mV in BCD
n
bytes
(continued on the next page)
4 MEG x 16 ASYNCHRONOUS/PAGE FLASH
Table 12
CFI
40
512K x 16 SRAM COMBO MEMORY
n
DESCRIPTION
ms, 0000 = not supported
n
ms, 0000 = not supported
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ms, 0000 = not supported
n
n
ms, 0000 = not supported
µs, 0000 = not supported
n
µs, 0000 = not supported
n
n
µs, 0000 = not
n
µs, 0000 = not
©2002, Micron Technology, Inc.
PP
ball