MT28C6428P20FM-80 TET Micron Technology Inc, MT28C6428P20FM-80 TET Datasheet - Page 35

• Manufacturer Part Number: MT28C6428P20FM-80 TET
• Manufacturer: Micron Technology Inc

Specifications of MT28C6428P20FM-80 TET

• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

FLASH WRITE CYCLE TIMING REQUIREMENTS
FLASH ERASE AND PROGRAM CYCLE TIMING REQUIREMENTS
4 Meg x 16 Asynchronous/Page Flash 512K x 16 SRAM Combo Memory
MT28C6428P20_4.p65 – Rev. 4, Pub. 10/02
PARAMETER
Reset HIGH recovery to F_WE# going LOW
F_CE# setup to F_WE# going LOW
Write pulse width
Data setup to F_WE# going HIGH
Address setup to F_WE# going HIGH
F_CE# hold from F_WE# HIGH
Data hold from F_WE# HIGH
Address hold from F_WE# HIGH
Write pulse width HIGH
F_WP# setup to F_WE# going HIGH
F_V
Write recovery before READ
Write recovery before READ in opposite bank
F_WP# hold from valid SRD
F_V
F_WE# HIGH to data valid
PARAMETER
4KW parameter block program time
32KW parameter block program time
Word program time
4KW parameter block erase time
32KW parameter block erase time
Program suspend latency
Erase suspend latency
Chip programming time
PP
PP
setup to F_WE# going HIGH
hold from valid SRD
4 MEG x 16 ASYNCHRONOUS/PAGE FLASH
SYMBOL
t
t
t
t
WOA
t
VPPH
t
t
t
WPH
WOS
t
t
t
RHH
t
t
t
t
t
RHS
VPS
WP
WB
DH
AH
CH
RS
CS
DS
AS
35
512K x 16 SRAM COMBO MEMORY
F_V
MIN
150
200
50
50
50
30
50
CC
0
0
0
0
0
0
0
0
= 1.80V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-80
t
AA + 50
MAX
–
2.20V
F_V
MIN
150
200
TYP
320
0.3
0.5
70
70
70
30
50
40
CC
0
0
0
0
0
0
0
0
8
5
5
= 1.70V
-80/-85
-85
t
AA + 50
10,000
–
6,400
MAX
MAX
800
1.90V
10
20
20
6
6
©2002, Micron Technology, Inc.
UNITS
UNITS
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
S
s
s