BLF6G10LS-160,112 NXP Semiconductors, BLF6G10LS-160,112 Datasheet - Page 92

IC BASESTATION FINAL SOT502B

BLF6G10LS-160,112

Manufacturer Part Number
BLF6G10LS-160,112
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G10LS-160,112

Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
1GHz
Gain
28dB
Minimum Operating Temperature
- 55 C
Mounting Style
Screw
Product Type
MOSFET Power
Transistor Polarity
N-Channel
Configuration
Single
Continuous Drain Current
44 A
Power Dissipation
115 W
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Power - Output
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060894112
BLF6G10LS-160
BLF6G10LS-160
Small-signal discretes
Very low-V
9
Package
Size (mm)
P
I
max
(A)
F
tot
1.0
1.0
1.0
1.0
1.0
1.5
1.5
2.0
2.0
2.0
3.0
(mW)
V
max
(V)
R
30
40
40
60
60
20
30
10
20
30
10
F
V
max
(mV)
680
600
640
650 0.35 Single
710
660
500
460
525
620
530
F
(MEGA) Schottky rectifiers (continued)
I
max
(mA)
R
0.5 Single
0.1 Single
0.1 Single
0.1 Single
0.2 Single
1.0 Single
3.0 Single
0.2 Single
1.0 Single
3.0 Single
Configuration
SOT457
(SC-74)
2.9 x 1.5 x 1.0
PMEG6010AED
500
SOT346
(SC-59A)
2.9 x 1.5 x 1.15 2.9 x 1.3 x 1.0
TBD
SOT23
PMEG4010ET
250
SOD123F
2.6 x 1.6 x 1.1
PMEG4010CEH
PMEG4010EH
PMEG6010CEH
PMEG2015EH
PMEG3015EH
PMEG1020EH
PMEG2020EH
PMEG3020EH
PMEG1030EH
830
SOD323
(SC-76)
1.7 x 1.25 x 0.95 1.7 x 1.25 x 0.7 1.6 x 1.2 x 0.55 1.2 x 0.8 x 0.6
PMEG4010BEA PMEG4010EJ
PMEG2015EA
PMEG1020EA
PMEG2020AEA PMEG2020EJ
400
SOD323F
(SC-90)
PMEG4010CEJ
PMEG6010CEJ
PMEG2015EJ
PMEG3015EJ
PMEG1020EJ
PMEG3020EJ
PMEG1030EJ
830
SOT666
PMEG4010BEV
PMEG2015EV
PMEG3015EV
PMEG1020EV
300
SOD523
(SC-79)
PMEG3010EB
500
SOD882
1.0 x 0.6 x 0.5
250

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