BLF6G10LS-160,112 NXP Semiconductors, BLF6G10LS-160,112 Datasheet - Page 76

• Manufacturer Part Number: BLF6G10LS-160,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-160,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 1GHz
• Gain: 28dB
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Product Type: MOSFET Power
• Transistor Polarity: N-Channel
• Configuration: Single
• Continuous Drain Current: 44 A
• Power Dissipation: 115 W
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Power - Output: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060894112; BLF6G10LS-160; BLF6G10LS-160

RF
2-GHz basestations (continued)
76
Product
Drivers
BLF6G20S-45
BLF6G20-45
BLF6G20S-40
BLF6G20-40
BLF6G21-15
BLF6G21-6
BLF3G21-30
BLF3G21-6
BLF2045
BLF1822-10
BLF2043
BLF2043F
BGF1801-10
Package
SOT608B
SOT608A
SOT608B
SOT608A
SOT538A
SOT538A
SOT467C
SOT538A
SOT467C
SOT467C
SOT538A
SOT467C
SOT365C
I/O
I/O
I/O
I/O
Mode of operation
W-CDMA / UMTS
W-CDMA / UMTS
W-CDMA / UMTS
W-CDMA / UMTS
CW
CW
2-Tone
PHS class A
2-Tone
PHS class A
CW
CW
CW
CW
CW
EDGE
1800 - 2000
1800 - 2000
1800 - 2000
1800 - 2000
800-4000
800-4000
HF - 2200
HF - 2200
1800 - 2200
HF - 2200
HF - 2200
HF - 2200
1805 - 1880
2.5
2.5
2.5
2.5
3.5
15
30
30
12
12
10
10
6
9
6
2
18.5
18.5
TBD
TBD
13.5
13.5
19
19
16
16
11
13
12
12
26
13
13
13
13
10
10
35
20
35
20
30
40
40
30
35
20
-45
-45
-26
-23
-49
-49
-49
-49
-48
-48
-63
-75
-75
1.2
1.70
1.70
1.70
1.70
TBD
TBD
1.60
2.10
10
5
9
5