BLF6G10LS-160,112 NXP Semiconductors, BLF6G10LS-160,112 Datasheet - Page 59

• Manufacturer Part Number: BLF6G10LS-160,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-160,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 1GHz
• Gain: 28dB
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Product Type: MOSFET Power
• Transistor Polarity: N-Channel
• Configuration: Single
• Continuous Drain Current: 44 A
• Power Dissipation: 115 W
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Power - Output: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060894112; BLF6G10LS-160; BLF6G10LS-160

Wideband transistors [RF small signal]
G
Product
BFS17
BFS17W
BFS17A
BFR92A
BFR92AW
BFR93AW
BFG591
BFG67(/X)
BFQ67W
PBR941
PBR951
PRF957
BFG520(/X)
BFG520W(/X)
BFG540(/X)
BFG540W(/X)
BFG541
BFM505
BFM520
BFQ540
BFR505
BFR505T
UM
= Maximum Unilateral Gain
Curve
22
14
14
20
20
21
21
21
19
20
21
19
19
3
3
4
7
7
8
Package
SOT23
SOT323
SOT23
SOT23
SOT323
SOT323
SOT223
SOT143
SOT323
SOT23
SOT23
SOT323
SOT143
SOT343
SOT143
SOT343
SOT223
SOT363
SOT363
SOT89
SOT23
SOT416
(GHz)
Typ
1.6
2.8
8.5
f
1
5
5
5
7
8
8
8
8
9
9
9
9
9
9
9
9
9
9
T
V ceo
(V)
15
15
15
15
15
12
15
10
10
10
10
10
15
15
15
15
15
15
15
15
8
8
Maximum values
(mA)
200
100
100
120
120
120
120
25
50
25
25
25
35
50
50
50
70
70
18
70
18
18
I c
(mW)
2000
1000
1200
300
300
300
300
300
300
380
300
360
365
270
300
500
500
500
650
500
150
150
P
tot
Polarity
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
G
(dB)
13.5
14
14
13
13
17
13
15
14
15
19
17
18
16
15
17
15
17
17
UM
(dB)
NF
4.5
4.5
2.5
2.1
1.5
1.7
1.3
1.4
1.3
1.3
1.6
1.1
1.3
1.3
1.3
1.1
1.2
1.9
1.2
1.2
2
(MHz)
1000
1000
1000
1000
1000
1000
1000
1000
500
500
800
900
900
900
900
900
900
900
900
900
900
900
@
G
(dB)
7.5
9.5
9.2
10
13
11
11
10
10
10
8
8
8
8
8
9
9
UM
1.85
(dB)
NF
2.1
2.5
2.7
1.8
1.9
2.1
2.1
2.1
1.9
1.9
1.9
3
3
2
2
(MHz)
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
@
(mV)
150
150
275
275
500
500
500
500
700
V o
(dBm)
17
17
21
21
21
PI
4
(dBm)
ITO
26
26
34
34
34
10
Continued next page
@ I c &
(mA)
14
14
20
20
40
40
40
40
70
5
V ce
(V)
10
10
10
6
6
8
8
8
8
6
59