BLF6G10LS-200 /T3 NXP Semiconductors

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BLF6G10LS-200 /T3

Manufacturer Part Number
BLF6G10LS-200 /T3
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors

Specifications of BLF6G10LS-200 /T3

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
49 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
SOT502B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G10LS-200,118

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