BLF6G10LS-160,112 NXP Semiconductors, BLF6G10LS-160,112 Datasheet - Page 74
![IC BASESTATION FINAL SOT502B](/photos/5/63/56376/568-2-ldmost_sot-502b_sml.jpg)
BLF6G10LS-160,112
Manufacturer Part Number
BLF6G10LS-160,112
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G20LS-140118.pdf
(100 pages)
Specifications of BLF6G10LS-160,112
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
1GHz
Gain
28dB
Minimum Operating Temperature
- 55 C
Mounting Style
Screw
Product Type
MOSFET Power
Transistor Polarity
N-Channel
Configuration
Single
Continuous Drain Current
44 A
Power Dissipation
115 W
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Power - Output
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060894112
BLF6G10LS-160
BLF6G10LS-160
BLF6G10LS-160
BLF6G10LS-160
- Current page: 74 of 100
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RF
1-GHz basestations (continued)
74
Product
BLF6G21-6
BLF3G21-30
BLF3G21-6
BLF1046
BLF1822-10
BLF1043
BGF802-20
BGF844
BGF944
Package
SOT538A
SOT467C
SOT538A
SOT467C
SOT467C
SOT538A
SOT365C
SOT365C
SOT365C
Mode of operation
CW
2-Tone
PHS class A
2-Tone
PHS class A
CW
CW
CW
CW
CDMA
CW
EDGE
CW
EDGE
800-4000
HF - 2200
HF - 2200
HF - 1000
HF - 2200
HF - 1000
869 - 894
869 - 894
920 - 960
2.5
2.5
30
50
12
10
25
23
17
6
9
6
2
3
TBD
13.5
13.5
18.5
16
16
16
13
30
30
30
10
35
20
35
20
60
40
55
50
18
50
16
50
16
-45
-26
-23
-48
-69
-65
-65
-75
-75
0.4
0.4
TBD
1.60
1.87
10
5
9
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