BLF6G10LS-160,112 NXP Semiconductors, BLF6G10LS-160,112 Datasheet - Page 34

IC BASESTATION FINAL SOT502B

BLF6G10LS-160,112

Manufacturer Part Number
BLF6G10LS-160,112
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G10LS-160,112

Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
1GHz
Gain
28dB
Minimum Operating Temperature
- 55 C
Mounting Style
Screw
Product Type
MOSFET Power
Transistor Polarity
N-Channel
Configuration
Single
Continuous Drain Current
44 A
Power Dissipation
115 W
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Power - Output
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060894112
BLF6G10LS-160
BLF6G10LS-160
I
I
4
GTL2000
GTL2002
GTL2010
LM75A
NE1617A
NE1619
P82B715
P82B96
PCA24S08
PCA8550
PCA8565
PCA8581/81C
PCA9306
PCA9500
PCA9501
PCA9502
PCA9506
PCA9508
PCA9509
PCA9510(A),
11(A),12(A),
13(A), 14(A)
PCA9515/15A
PCA9516/16A
PCA9517
PCA9518/18A
PCA9519
PCA9530
2
2
C-bus devices
C-bus devices
Type of function in device
40
8
8
8
2
4-1-1
1-4
1-4
4-4
1-1
1-1
1-1
1-1
1-1
1-1
1-1
2 °C
2 °C
2 °C
8
1
2
2
2-64
NA
NA
NA
NA
NA
2-8
NA
NA
NA
NA
NA
NA
NA
NA
8
9
2
1
1
1
8
8
8
2
0/1
0/1
0/1
0/1
0/1
0/1
• 10-80
• 15-600
• 25-50
25-100
25-100
V
CC
range (V)
2.8 •
Freq
(kHz)
Features
Temp (°C)
-40 to 125
-40 to 125
-25 to 85
0 to 125
0 to 125
Packages
20/24
48
24
16
16
16
16
20
16
56
16
20
8
8
8
8
8
8
8
8
8
8
8
8
8
8
PN
PN
PN
D
D
TD
TD
D
D
TD
D
D
D
D
D
D
D
D
D
D
D
DL
DB
Continued next page
DS
DS
DGG
DP
PW
DP
DP
DP
PW
DP
DP
PW
PW
DGG BS
DP
DP
DP
DP
DP
DP
PW
PW
DP
DC/GM
BS
DC/GM
BS
BS
BS
BS

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