BLF6G10LS-160,112 NXP Semiconductors, BLF6G10LS-160,112 Datasheet - Page 87

• Manufacturer Part Number: BLF6G10LS-160,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-160,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 1GHz
• Gain: 28dB
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Product Type: MOSFET Power
• Transistor Polarity: N-Channel
• Configuration: Single
• Continuous Drain Current: 44 A
• Power Dissipation: 115 W
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Power - Output: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060894112; BLF6G10LS-160; BLF6G10LS-160

MOSFET driver transistors (new)
Package
P
Contains
General-purpose transistors
General-purpose transistors
General-purpose transistors
General-purpose transistors
Switching transistors -
reduced storage time
Switching transistors -
reduced storage time
Low V
Low V
Low V
Low V
tot
CEsat
CEsat
CEsat
CEsat
(BISS) transistors -
high h
(BISS) transistors -
high h
FE
FE
and I
and I
C
C
I
0.1
0.1
0.1
0.1
0.6
0.6
1.0
1.0
C
(A)
I
0.2
0.2
0.2
0.2
1.2
1.2
2.0
2.0
CM
(A)
SOT457 (SC-74)
600 mW
PMD9050D
SOT346 (SC-59A)
250 mW
PMD4001K (NPN)
PMD5001K (PNP)
PMD4002K (NPN)
PMD5002K (PNP)
PMD4003K (NPN)
PMD5003K (PNP)
SOT457 (SC-74)
600 mW
R1 = R2 (kΩ)
2.2
4.7
10
PMD9010D
PMD9001D
PMD9002D
PMD9003D
SOT457 (SC-74)
600 mW
BCV65 (SOT143B)
PMD2001D
PMD3001D
7