BLF6G10LS-160,112 NXP Semiconductors, BLF6G10LS-160,112 Datasheet - Page 68

• Manufacturer Part Number: BLF6G10LS-160,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-160,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 1GHz
• Gain: 28dB
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Product Type: MOSFET Power
• Transistor Polarity: N-Channel
• Configuration: Single
• Continuous Drain Current: 44 A
• Power Dissipation: 115 W
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Power - Output: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060894112; BLF6G10LS-160; BLF6G10LS-160

RF
RF/IF systems
Single pole double throw (SPDT) RF switches
UHF/900-MHz wireless transceiver
6
(1)
SA630
SA58643
(1)
Product
SA604A/01
SA614A/01
Device
SA58646
Pin-compatible with Peregrine PE4231
At 455-kHz IF: tr = 1.4 µs (typ), tf = 21.3 µs (typ), at 10.7-MHz IF: tr = 1.5 µs (typ), tf = 19.4 µs (typ)
(1)
Package
LQFP64 (BD)
UK (CSP8)
(TSSOP8)
D (SO8)
DP
D (SO16)
D (SO16)
Package
3.0 to
3.0 to
2.9 to 5.5
5.5
5.5
V CC operating range
4.5 to 8.0
4.5 to 8.0
40 /
300
40 /
300
(V)
1
Channel enable
2.0 /
V DD
2.0 /
V DD
55
bandwidth (MHz)
-0.3 /
-0.3 /
IF 3-dB
0.8
0.8
41
41
72
1 / –
1 / –
Insertion loss,
(ON channel)
S21, S12
22
1.4
1.4
/ –
/ –
-3 dB limiting
-92 dBm
-92 dBm
2.8
2.8
2 /
2 /
90
70 /
70 /
80
80
68
Isolation S21, S12
(OFF channel)
– / 60 – / 50 – / 30
– / 60 – / 50 – / 30
Fast RSSI
7.0-15
(1)
(1)
1200
300-
Muted and
unmuted
•
•
(ON channel)
4.0-20
Return loss
20
20
S11, S22
12
12
2, 2.5, 4, 1,
Two audio
outputs
128
(OFF channel)
•
•
Return loss
17
17
S11, S22
13
13
RSSI dynamic range
•
(dB)
20
20
90
80
•
20
20
•
RSSI accuracy (dB)
18
18
•
±1.5
±2.0
+33
+33
•
+52
+52
RSSI output at input of
•
-68 dBm
1.9/3.1
1.7/3.3
Z O = 50 Ω
1
1
•
2
2
•