BLF6G10LS-160,112 NXP Semiconductors, BLF6G10LS-160,112 Datasheet - Page 28

• Manufacturer Part Number: BLF6G10LS-160,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-160,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 1GHz
• Gain: 28dB
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Product Type: MOSFET Power
• Transistor Polarity: N-Channel
• Configuration: Single
• Continuous Drain Current: 44 A
• Power Dissipation: 115 W
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Power - Output: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060894112; BLF6G10LS-160; BLF6G10LS-160

Audio amplifiers
Class-AB audio amplifiers (continued)

Product
TFA9800J
TFA9841J
TFA9842J
TFA9842AJ
TFA9842BJ
TFA9843J
TFA9843BJ
TFA9843AJ
Description
2x6 W
SE 7 W
SE 2x7 W
SE 2x7 W
SE 2x7 W
SE 2x15 W
SE 2x15 W
SE 2x15 W
Output
stage
SE
SE/BTL 9- 26
SE/BTL 9- 26
SE
SE
SE/BTL 9- 26
SE/BTL 9- 26
SE
Vp (V)
8.5 - 18
9- 28
9- 26
9- 28
Po (W) 10%
THD
2x6 W
(4Ω,15V)
7.5 W
(4 Ω, 16 V)
2x7.5 W
(4 Ω,16V)
2x7.5 W
(4Ω,16V)
2x7.5 W
(4Ω,16V)
2x15 W
(4 Ω, 22 V)
2x15 W
(4 Ω, 22 V)
2x15 W
(4 Ω, 22 V)
DC Vol
80 dB
80 dB
THD
1 kHz
0.10%
0.10%
0.1/
0.05%
0.1/
0.05%
0.10%
0.1/
0.05%
0.1/
0.05%
0.1/
0.05%
Iq (mA)
@ Vp typ
40
40
60
60
60
60
60
60
Gain
(dB)
26/32
26/32
26/32
20
26
26
26
26
SVRR
(dB)
>48
60
60
60
60
60
60
60
X-talk
(dB)
>40
60
60
60
60
60
60
DC offset
(mV)
<200
<200
<200
Vnoise (μV)
(20 - 20 kHz)
150/200
150/200
150/200
150
150
150
150
50
Rth j-c
(k/W)
>52
3.8
2
2
2
2
2
2
Mute Package
•
•
•
•
•
•
•
•
SIL9LC
SIL9LC
SIL9LC
SIL9LC
SIL9LC
SIL9LC
SIL9LC
SIL9LC
Remarks
Equal phase
Equal phase