HUF75333S3ST Fairchild Semiconductor, HUF75333S3ST Datasheet - Page 9

• Manufacturer Part Number: HUF75333S3ST
• Description: MOSFET N-CH 55V 60A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75333S3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 66A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 20V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 66 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPICE Thermal Model
REV January 1999
HUF75333
CTHERM1 th 6 4.9e-4
CTHERM2 6 5 4.5e-3
CTHERM3 5 4 6.0e-3
CTHERM4 4 3 8.5e-3
CTHERM5 3 2 1.0e-2
CTHERM6 2 tl 5.0e-2
RTHERM1 th 6 6.0e-4
RTHERM2 6 5 6.8e-3
RTHERM3 5 4 3.3e-2
RTHERM4 4 3 9.7e-2
RTHERM5 3 2 3.3e-1
RTHERM6 2 tl 3.6e-1
SABER Thermal Model
SABER thermal model HUF75333
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 4.9e-4
ctherm.ctherm2 6 5 = 4.5e-3
ctherm.ctherm3 5 4 = 6.0e-3
ctherm.ctherm4 4 3 = 8.5e-3
ctherm.ctherm5 3 2 = 1.0e-2
ctherm.ctherm6 2 tl = 5.0e-2
rtherm.rtherm1 th 6 = 6.0e-4
rtherm.rtherm2 6 5 = 6.8e-3
rtherm.rtherm3 5 4 = 3.3e-2
rtherm.rtherm4 4 3 = 9.7e-2
rtherm.rtherm5 3 2 = 3.3e-1
rtherm.rtherm6 2 tl = 3.6e-1
}
©2003 Fairchild Semiconductor Corporation
RTHERM5
RTHERM2
RTHERM3
RTHERM6
RTHERM1
RTHERM4
HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Rev. B1
th
5
4
3
2
tl
6
JUNCTION
CASE
CTHERM5
CTHERM2
CTHERM1
CTHERM3
CTHERM4
CTHERM6