HUF75333S3ST Fairchild Semiconductor, HUF75333S3ST Datasheet - Page 10

• Manufacturer Part Number: HUF75333S3ST
• Description: MOSFET N-CH 55V 60A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75333S3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 66A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 20V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 66 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Rev. I2