HUF75333S3ST Fairchild Semiconductor, HUF75333S3ST Datasheet - Page 4

• Manufacturer Part Number: HUF75333S3ST
• Description: MOSFET N-CH 55V 60A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75333S3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 66A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 20V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 66 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2003 Fairchild Semiconductor Corporation
150
120
500
100
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
1000
90
60
30
10
0
100
1
50
0
FIGURE 7. SATURATION CHARACTERISTICS
10
1
-5
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
DSS(MAX)
1.5
V
V
DS
DS
V
GS
= 55V
, DRAIN TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
DS(ON)
= 10V
3.0
10
10
-4
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
C
= 25
4.5
V
V
V
V
V
GS
GS
GS
GS
GS
o
T
T
C
= 20V
= 10V
(Continued)
= 6V
C
= 7V
= 5V
J
= MAX RATED
= 25
FIGURE 4. PEAK CURRENT CAPABILITY
o
6.0
100 s
1ms
10ms
10
C
-3
100
200
7.5
t, PULSE WIDTH (s)
10
-2
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
500
100
150
120
10
90
60
30
0
0.001
0
FIGURE 8. TRANSFER CHARACTERISTICS
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
If R = 0
t
If R
t
AV
AV
DD
T
= (L)(I
= (L/R)ln[(I
= 15V
HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Rev. B1
C
0
= 25
10
1.5
V
STARTING T
AS
GS
-1
0.01
o
C
t
)/(1.3*RATED BV
, GATE TO SOURCE VOLTAGE (V)
AV
AS
, TIME IN AVALANCHE (ms)
*R)/(1.3*RATED BV
3.0
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
J
I = I
= 150
0.1
25
o
DSS
STARTING T
C
o
10
4.5
C DERATE PEAK
- V
0
DSS
DD
175 - T
150
)
- V
-55
1
J
C
DD
= 25
6.0
o
) +1]
C
o
175
C
25
o
C
o
C
10
7.5
10
1