HUF75333S3ST Fairchild Semiconductor, HUF75333S3ST Datasheet - Page 8

• Manufacturer Part Number: HUF75333S3ST
• Description: MOSFET N-CH 55V 60A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75333S3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 66A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 20V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 66 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SABER Electrical Model
REV August 1997
template huf75333 n2, n1, n3
electrical n2, n1, n3
{
var i iscl
d..model dbodymod = (is = 1.3e-12, xti = 6, cjo = 1.7e-9, tt = 40e-8, n = 1, m = 0.45, vj=0.75)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 1.8e-9, is = 1e-30, n = 1, m = 0.9, vj = 1.45, fc=0.5)
m..model mmedmod = (type=_n, vto = 3.183, kp = 2, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.66, kp = 51.5, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.703, kp = 8e-3, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -8, voff = -3)
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -3, voff = -8)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = 0, voff = .5)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = .5, voff = 0)
c.ca n12 n8 = 1.8e-9
c.cb n15 n14 = 1.73e-9
c.cin n6 n8 = 1.19e-9
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 1e-9
l.lsource n3 n7 = 1e-9
m.mmed n16 n6 n8 n8 = model=mmedmod, l = 1u, w = 1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l = 1u, w = 1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l = 1u, w = 1u
res.rbreak n17 n18 = 1, tc1 = 1.07e-3, tc2 = 4.5e-7
res.rdbody n71 n5 = 3e-3, tc1 = 2.7e-3, tc2 = 7e-7
res.rdbreak n72 n5 = 1.1e-1, tc1 = -4e-4, tc2 = -1.55e-5
res.rdrain n50 n16 = 4.5e-3, tc1 = 1.16e-2, tc2 = 1.7e-5
res.rgate n9 n20 = 1
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 10
res.rlsource n3 n7 = 10
res.rslc1 n5 n51 = 1e-6, tc1 = 3.96e-3, tc2 = 2.7e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 5.95e-3, tc1 = 1e-3, tc2 = 1e-5
res.rvtemp n18 n19 = 1, tc1 = -2.75e-3, tc2 = 0.5e-6
res.rvthres n22 n8 = 1, tc1 = -2.8e-3, tc2 = -1e-6
spe.ebreak n11 n7 n17 n18 = 58.85
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc = 1
equations {
i (n51->n50) + = iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/180))** 4))
}
}
©2003 Fairchild Semiconductor Corporation
GATE
1
RLGATE
LGATE
9
RGATE
CA
12
20
EVTEMP
+
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
8
6
RSLC2
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
5
MSTRO
14
51
21
RSLC1
50
RDRAIN
HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Rev. B1
ISCL
16
8
MMED
8
RDBREAK
DBREAK
IT
RSOURCE
MWEAK
17
EBREAK
RVTHRES
RBREAK
72
11
+
-
17
18
7
+
-
18
22
RVTEMP
19
71
RLSOURCE
LSOURCE
VBAT
RLDRAIN
LDRAIN
RDBODY
DBODY
SOURCE
DRAIN
2
3