NDH832P Fairchild Semiconductor, NDH832P Datasheet - Page 6

• Manufacturer Part Number: NDH832P
• Description: MOSFET P-CH 20V 4.2A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of NDH832P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1000pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Thermal Characteristics
Figure 12. SOT-8 Maximum Steady-State Power
0.03
0.01
0.3
0.1
2.5
1.5
0.5
3 0
1 0
3
1
2
1
0
0.1
0
1c
Dissipation versus Copper Mounting Pad
Area.
0.05
0.03
0.02
0.01
1 b
0 .5
0 .3
0 .2
0 .1
Figure 14. Maximum Safe Operating Area.
0 .0 0 0 1
1
R
0.2
SINGLE PULSE
J A
V
T
= See Note 1c
A
0.2
GS
D = 0.5
2oz COPPER MOUNTING PAD AREA (in
0.2
= 25°C
- V
= -4.5V
0.1
0.05
0.02
0.5
DS
0.01
Figure 15. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
Single Pulse
, DRAIN-SOURCE VOLTAGE (V)
0.4
0 .001
1
depending on the circuit board design.
2
0.6
5
4.5"x5" FR-4 Board
T
Still Air
0 .0 1
A
= 2 5 C
2
1 0
0.8
)
o
2 0
3 0
1a
1
0 .1
t , TIME (sec)
1
4.5
3.5
2.5
5
4
3
2
0
Figure 13. Maximum Steady-State Drain
1c
.
1 b
Current versus Copper Mounting Pad
Area.
1
0.2
2oz COPPER MOUNTING PAD AREA (in
P(pk)
0.4
1 0
T - T
Duty Cycle, D = t
R
J
R
JA
t
1
A
JA
(t) = r(t) * R
t
= P * R
2
= See Note 1c
0.6
JA
1
/ t
4.5"x5" FR-4 Board
T
Still Air
V
A
G S
JA
(t)
1 0 0
2
= 2 5 C
= -4.5V
NDH832P Rev. B2
2
0.8
)
o
3 0 0
1a
1