NDH832P Fairchild Semiconductor, NDH832P Datasheet

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NDH832P

Manufacturer Part Number
NDH832P
Description
MOSFET P-CH 20V 4.2A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDH832P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 4.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 4.5V
Input Capacitance (ciss) @ Vds
1000pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDH832P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Absolute Maximum Ratings
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
___________________________________________________________________________________________
D
J
DSS
GSS
D
,T
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
JA
JC
General Description
NDH832P
P-Channel Enhancement Mode Field Effect Transistor
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1a)
(Note 1)
(Note 1c)
(Note 1a)
(Note 1a)
(Note 1b)
Features
-4.2A, -20V. R
High density cell design for extremely low R
Enhanced SuperSOT
package with high power and current handling capability.
5
6
7
8
R
DS(ON)
DS(ON)
NDH832P
-55 to 150
= 0.08
-4.2
= 0.06
-20
-15
1.8
0.9
70
20
-8
1
TM
-8 small outline surface mount
@ V
@ V
GS
GS
= -2.7V
= -4.5V
4
3
1
2
DS(ON).
.
NDH832P Rev. B2
June 1996
Units
°C/W
°C/W
W
°C
V
V
A

Related parts for NDH832P

NDH832P Summary of contents

Page 1

... V = -4.5V DS(ON 0. -2.7V . DS(ON) GS DS(ON small outline surface mount NDH832P -20 -8 -4.2 -15 1.8 1 0.9 -55 to 150 70 20 NDH832P Rev. B2 June 1996 Units °C °C/W °C/W ...

Page 2

... Q Gate-Drain Charge gd Conditions -250 µ - -250 µ 125 -4 -4 125 - 1.0 MHz -4 GEN GEN Min Typ Max Units - µ -10 µA 100 nA -100 nA -0.4 -0 -0.3 -0.5 -0.8 0.045 0.06 o 0.063 0.12 C 0.064 0.08 - 1000 pF 530 pF 180 1 NDH832P Rev. B2 ...

Page 3

... C/W when mounted on a 0.026 in pad of 2oz copper 135 C/W when mounted on a 0.005 in pad of 2oz copper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions -1.5 A (Note Min Typ Max Units -1.5 A -0.75 -1 guaranteed NDH832P Rev. B2 ...

Page 4

... Figure 6. Gate Threshold Variation with V = -2.5V GS -2.7 -3.0 -3.5 -4.0 -4 -12 - DRAIN CURRENT (A) D Voltage and Drain Current. = -4. 125°C J 25°C -55° -12 - DRAIN CURRENT (A) D Current and Temperature -250µ 100 T , JUNCTION TEMPERATURE (°C) J Temperature. NDH832P Rev. B2 -5.0 -20 - 125 150 ...

Page 5

... Current and Temperature -4. iss 4 C oss rss Figure 10. Gate Charge Characteristics -55°C J 25°C 125°C -12 -16 - 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE ( -5.0V DS -10V -15V GATE CHARGE (nC) g NDH832P Rev. B2 1.4 1 ...

Page 6

... FR-4 Board Still Air 2 0 Figure 13. Maximum Steady-State Drain Current versus Copper Mounting Pad Area TIME (sec 4.5"x5" FR-4 Board Still Air V = -4. 0.2 0.4 0.6 0.8 2 2oz COPPER MOUNTING PAD AREA ( ( See Note 1c JA P(pk ( Duty Cycle NDH832P Rev ...

Page 7

... NDH832P Rev. B2 ...

Page 8

... NDH832P Rev. B2 ...

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