NDH832P Fairchild Semiconductor, NDH832P Datasheet - Page 4

• Manufacturer Part Number: NDH832P
• Description: MOSFET P-CH 20V 4.2A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of NDH832P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1000pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics
-20
-15
-10
1.6
1.4
1.2
0.8
0.6
-5
-20
-16
-12
Figure 1. On-Region Characteristics.
0
1
-8
-4
-50
0
0
0
Figure 3. On-Resistance Variation with
V
V
Figure 5. Transfer Characteristics.
GS
DS
-25
= -4.5V
V
I
-0.5
D
GS
= -10V
Temperature.
= -4.2A
= -4.5V
-1
V
0
T , JUNCTION TEMPERATURE (°C)
V
-3.5
DS
J
-1
GS
, DRAIN-SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
-3.0
2 5
-1.5
-2.7
-2.5
-2
5 0
-2
T
J
= -55°C
7 5
-2.5
-2.0
1 0 0
-3
25°C
-3
-1.5
1 2 5
125°C
-3.5
1 5 0
-4
-4
1.2
1.1
0.9
0.8
0.7
0.6
1.5
0.5
1.8
1.6
1.4
1.2
0.8
1
Figure 4. On-Resistance Variation with Drain
Figure 2. On-Resistance Variation with Gate
-50
2
1
2
1
0
0
Figure 6. Gate Threshold Variation with
V
G S
Current and Temperature.
Voltage and Drain Current.
-25
V
= -4.5V
GS
Temperature.
= -2.5V
-4
-4
0
T , JUNCTION TEMPERATURE (°C)
J
I
I
D
D
2 5
, DRAIN CURRENT (A)
-2.7
, DRAIN CURRENT (A)
-8
-8
5 0
-3.0
T = 125°C
J
-12
-12
7 5
-3.5
25°C
-4.0
-55°C
I
100
V
D
NDH832P Rev. B2
DS
-4.5
= -250µA
-16
-16
= V
-5.0
125
GS
150
-20
-20