NDH832P Fairchild Semiconductor, NDH832P Datasheet - Page 3

• Manufacturer Part Number: NDH832P
• Description: MOSFET P-CH 20V 4.2A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of NDH832P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1000pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
S
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
SD
design while R
P
Typical R
D
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
t
a. 70
b. 125
c. 135
Scale 1 : 1 on letter size paper
JA
R
T
1a
J
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
JA
T
Parameter
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
o
CA
A
t
C/W when mounted on a 1 in
o
o
C/W when mounted on a 0.005 in
C/W when mounted on a 0.026 in
is determined by the user's board design.
R
JC
T
J
R
T
A
C A
t
I
2
D
t
2
pad of 2oz cpper.
R
(T
DS ON
2
2
pad of 2oz copper.
pad of 2oz copper.
A
= 25°C unless otherwise noted)
T
J
1b
Conditions
V
GS
= 0 V, I
S
= -1.5 A
(Note 2)
1c
Min
-0.75
Typ
NDH832P Rev. B2
JC
Max
-1.5
-1.2
is guaranteed by
Units
A
V