NDH832P Fairchild Semiconductor, NDH832P Datasheet - Page 5

• Manufacturer Part Number: NDH832P
• Description: MOSFET P-CH 20V 4.2A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of NDH832P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1000pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics
2 5 0 0
2 0 0 0
1 0 0 0
5 0 0
3 0 0
2 0 0
1 0 0
Figure 11. Transconductance Variation with Drain
1.08
1.06
1.04
1.02
0.98
0.96
0.94
2 0
1 5
1 0
Figure 9. Capacitance Characteristics.
1.1
5
0
Figure 7. Breakdown Voltage Variation with
1
0.1
0
-50
I
D
Current and Temperature.
V
= -250µA
DS
Temperature.
-25
0.2
f = 1 MHz
V
= -10V
GS
-4
-V
= 0 V
T
DS
0
J
0.5
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
I
D
25
, DRAIN CURRENT (A)
-8
1
50
2
-12
75
T
J
= -55°C
125°C
100
25°C
5
-16
125
C iss
1 0
C oss
C rss
150
2 0
-20
0 . 0 0 0 1
0.001
5
4
3
2
1
0
Figure 8. Body Diode Forward Voltage Variation
0.01
0
Figure 10. Gate Charge Characteristics.
0.1
2 0
1 0
I
2
1
D
0
= -4.2A
V
with Current and Temperature
GS
T = 125°C
J
0.2
= 0V
5
-V
SD
0.4
, BODY DIODE FORWARD VOLTAGE (V)
Q
g
0.6
1 0
, GATE CHARGE (nC)
25°C
V
DS
0.8
= -5.0V
-55°C
1 5
1
-10V
.
1.2
NDH832P Rev. B2
-15V
2 0
1.4
1.6
2 5