FDD6680AS Fairchild Semiconductor, FDD6680AS Datasheet - Page 7

• Manufacturer Part Number: FDD6680AS
• Description: MOSFET N-CH 30V 55A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6680AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 29nC @ 15V
• Input Capacitance (ciss) @ Vds: 1200pF @ 15V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0105 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 44 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 55A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 10.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
Figure 12. Unclamped Inductive Load Test
Figure 14. Gate Charge Test Circuit
Figure 16. Switching Time Test
+
R
-
10V
V
GE
vary t
required peak I
V
V
GS
Drain Current
I
Circuit
R
GS
GS
g(REF
10µF
Same type as
P
V
GEN
0V
Duty Cycle ≤ 0.1%
Pulse Width ≤ 1µs
to obtain
DS
V
tp
V
GS
50kΩ
GS
V
Circuit
AS
DS
1µF
I
AS
0.01Ω
DUT
L
DUT
R
DUT
L
+
-
+
-
+
-
V
V
V
DD
DD
DD
Figure 13. Unclamped Inductive
10V
V
V
V
Figure 15. Gate Charge Waveform
GS
DS
GS
Figure 17. Switching Time Waveforms
0V
0V
10%
Q
t
d(ON)
90%
GS
Waveforms
Charge, (nC)
t
50%
ON
Q
10%
Pulse Width
I
G(TOT)
t
AS
Q
r
GD
t
P
BV
t
AV
DSS
t
)
d(OFF
90%
50%
t
OFF
V
t
10%
FDD6680AS Rev A1 (X)
f
DS
V
90%
DD