FDD6680AS Fairchild Semiconductor, FDD6680AS Datasheet - Page 2

• Manufacturer Part Number: FDD6680AS
• Description: MOSFET N-CH 30V 55A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6680AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 29nC @ 15V
• Input Capacitance (ciss) @ Vds: 1200pF @ 15V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0105 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 44 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 55A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 10.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Q
Q
Q
Q
t
t
t
t
t
t
t
t
Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
W
I
Off Characteristics
BV
∆BV
I
I
On Characteristics
V
∆V
R
I
g
Dynamic Characteristics
C
C
Switching Characteristics
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
d(on)
r
d(off)
f
d(on)
r
d(off)
f
C
AR
DSS
GSS
D(on)
S
rr
g
g
gs
gd
FS
GS(th)
R
SD
∆T
∆T
DS(on)
oss
rss
(TOT)
rr
DSS
iss
GS(th)
DSS
G
DSS
J
J
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Parameter
(Note 2)
(Note 2)
(Note 2)
V
f = 1.0 MHz
Single Pulse, V
I
V
I
V
V
V
I
V
V
V
V
V
V
V
V
I
d
D
D
D
F
iF
DS
GS
DS
GS
DS
GS
GS
GS
GS
DS
GS
GS
GS
T
=13.5A
= 12.5A,
= 1 mA, Referenced to 25°C
= 1 mA, Referenced to 25°C
/d
A
V
V
= 10 V, I
= 15 V,
= 25°C unless otherwise noted
= 0 V, I
= 24 V,
= ±20 V,
= V
= 10 V,
= 4.5 V,
= 10 V,
= 15 V,
= 15 mV,
= 0 V,
= 0 V,
V
t
V
V
GS
GS
= 300 A/µs
DD
DD
DD
Test Conditions
= 10 V,
= 4.5 V,
GS
= 15 V,
= 15 V,
= 15 V,
, I
D
D
D
= 1 mA
= 1 mA
I
I
= 12.5A, T
S
S
= 4.4 A
= 7 A
DD
V
V
I
I
V
I
V
f = 1.0 MHz
GS
D
D
D
DS
= 15 V,
I
DS
GS
D
= 12.5 A
= 10 A
= 12.5 A
R
R
= 0 V
= 0 V
= 12.5 A
I
I
= 5 V
GEN
GEN
= 0 V,
D
D
= 1 A,
= 1 A,
J
= 125°C
= 6 Ω
= 6 Ω
(Note 2)
(Note 2)
(Note 3)
Min
30
50
1
Typ
1200
10.3
12.5
350
120
1.4
8.6
1.6
0.5
0.6
54
29
–3
44
10
28
12
14
13
20
11
21
11
17
11
6
3
4
Max Units
±100
13.5
10.5
13.0
16.0
205
500
4.4
0.7
20
12
45
22
25
23
32
20
29
15
3
FDD6680AS Rev A1 (X)
mV/°C
mV/°C
mΩ
pF
mJ
µA
nA
nS
nC
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
Ω
ns
ns
ns
ns
A
V
V
A
S
A
V