FDD6680AS Fairchild Semiconductor, FDD6680AS Datasheet - Page 6

• Manufacturer Part Number: FDD6680AS
• Description: MOSFET N-CH 30V 55A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6680AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 29nC @ 15V
• Input Capacitance (ciss) @ Vds: 1200pF @ 15V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0105 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 44 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 55A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 10.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET.
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDD6680AS.
Figure 12. FDD6680AS SyncFET body diode
reverse recovery characteris
For comparison purposes, Figure 13 shows the
reverse recovery characteristics of the body diode
of an equivalent size MOSFET produced without
SyncFET (FDD6680).
Figure 13. Non-SyncFET (FDD6680) body
diode reverse recovery characteristic.
10nS/div
10nS/div
(continued)
This diode
Schottky barrie diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
0.000001
0.00001
0.0001
0.001
0.01
0.1
0
5
V
DS
10
, REVERSE VOLTAGE (V)
T
T
T
A
A
A
= 125
15
= 100
= 25
o
o
C
o
C
C
20
FDD6680AS Rev A1 (X)
25
30