FDD6680AS Fairchild Semiconductor, FDD6680AS Datasheet - Page 5

• Manufacturer Part Number: FDD6680AS
• Description: MOSFET N-CH 30V 55A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6680AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 29nC @ 15V
• Input Capacitance (ciss) @ Vds: 1200pF @ 15V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0105 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 44 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 55A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 10.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
1000
0.01
100
0.1
10
10
Figure 9. Maximum Safe Operating Area.
1
8
6
4
2
0
0.01
Figure 7. Gate Charge Characteristics.
0
I
D
SINGLE PULSE
R
R
0.001
= 12.5A
DS(ON)
θ JA
0.01
V
T
0.1
GS
A
0.0001
= 96
1
= 25
= 10V
LIMIT
o
o
C/W
5
C
0.1
V
DS
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
0.2
0.1
0.05
Q
0.02
g
0.01
, GATE CHARGE (nC)
10
0.001
V
DS
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
SINGLE PULSE
DC
= 10V
1
Figure 11. Transient Thermal Response Curve.
10s
1s
15
100ms
(continued)
15V
10ms
0.01
20V
10
1ms
100us
20
0.1
100
25
t
1
, TIME (sec)
1800
1500
1200
100
900
600
300
80
60
40
20
1
0
0.001
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
C
rss
0.01
5
Power Dissipation.
V
10
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
oss
0.1
10
t
1
, TIME (sec)
P(pk
Duty Cycle, D = t
T
R
J
R
15
θJA
100
1
- T
θJA
(t) = r(t) * R
t
1
A
t
= 96 °C/W
2
= P * R
C
iss
20
10
θJA
θJA
1
(t)
/ t
SINGLE PULSE
R
2
1000
θ JA
FDD6680AS Rev A1 (X)
T
A
= 96°C/W
= 25°C
100
25
V
f = 1MHz
GS
= 0 V
1000
30