FDD6680AS Fairchild Semiconductor, FDD6680AS Datasheet - Page 4

• Manufacturer Part Number: FDD6680AS
• Description: MOSFET N-CH 30V 55A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6680AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 29nC @ 15V
• Input Capacitance (ciss) @ Vds: 1200pF @ 15V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0105 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 44 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 55A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 10.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
100
100
1.6
1.4
1.2
0.8
0.6
80
60
40
20
80
60
40
20
Figure 3. On-Resistance Variation with
0
1
0
Figure 1. On-Region Characteristics.
-50
1
0
Figure 5. Transfer Characteristics.
I
V
D
GS
V
= 12.5A
V
6.0V
DS
-25
GS
=10V
1.5
= 5V
0.5
= 10V
V
T
GS
V
0
J
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
DS
Temperature.
T
2
A
, DRAIN-SOURCE VOLTAGE (V)
= 125
1
25
4.5V
o
C
2.5
1.5
50
25
4.0V
o
3
C
3.5V
-55
75
o
C
2
3.0V
3.5
100
o
C)
2.5V
2.5
4
125
150
4.5
3
Figure 6. Body Diode Forward Voltage Variation
0.01
0.032
0.026
0.014
0.008
1.8
1.6
1.4
1.2
0.8
100
0.1
0.02
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
10
with Source Current and Temperature.
2
1
1
0
0
V
2
Drain Current and Gate Voltage.
GS
V
GS
T
T
= 3.0V
A
A
= 0V
= 125
=25
Gate-to-Source Voltage.
o
V
20
3.5V
C
0.2
SD
o
C
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
4
25
, GATE TO SOURCE VOLTAGE (V)
4.0V
I
o
D
C
, DRAIN CURRENT (A)
T
A
40
= 125
0.4
-55
4.5V
o
o
C
C
6
5.0V
60
0.6
6.0V
FDD6680AS Rev A1 (X)
8
80
0.8
I
10V
D
= 6.3A
100
10
1