FQPF4N25 Fairchild Semiconductor, FQPF4N25 Datasheet - Page 73

• Manufacturer Part Number: FQPF4N25
• Description: MOSFET N-CH 250V 2.8A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF4N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 32W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 32 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 22 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 45 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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TO-3P (Continued)
FQA9P25
SFH9250L
FQA12P20
SFH9240
FQA36P15
SFH9154
FQA22P10
FQA17P10
SFH9140
FQA47P06
TO-3P P-Channel
Products
Min. (V)
BV
-250
-200
-200
-200
-150
-150
-100
-100
-100
-60
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.125
0.026
10V
0.62
0.47
0.09
0.19
0.5
0.2
0.2
–
R
DS(ON)
0.23@5V
4.5V
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-68
2.5V
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
125
100
GS
29
90
31
46
40
30
43
84
=5V
I
D
10.5
19.5
12.6
36
24
19
11
18
18
55
(A)
MOSFETs
P
D
150
204
150
126
294
204
150
120
166
214
(W)