FQPF4N25 Fairchild Semiconductor, FQPF4N25 Datasheet - Page 59

• Manufacturer Part Number: FQPF4N25
• Description: MOSFET N-CH 250V 2.8A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF4N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 32W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 32 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 22 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 45 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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TO-263 (D
FQB55N10
HUF76639S3S
HUFA76639S3S
HUF75637S3S
HUFA75637S3S
HUF76633S3S
HUFA76633S3S
FDB3682
FQB44N10
HUF75631S3S
HUFA75631S3S
IRFW550A
RF1S40N10SM
FQB33N10
IRFW540A
FQB33N10L
HUF75623S3S
HUFA75623S3S
FQB19N10
FQB19N10L
IRFW530A
FQB13N10
FQB13N10L
IRFW520A
FQB7N10
FQB7N10L
IRFW510A
FQB32N12V2
FDB2532
FDB2552
FQB45N15V2
FQB46N15
HUFA75842S3S
FDB42AN15A0
FDB2572
FDB2570
FQB16N15
FQB14N15
FQB9N15
Products
2
Min. (V)
PAK) (Continued)
BV
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
120
150
150
150
150
150
150
150
150
150
150
150
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.026
0.026
0.026
0.035
0.035
0.036
0.039
0.052
0.052
0.052
0.064
0.064
0.016
0.036
0.042
0.042
0.042
0.056
10V
0.03
0.03
0.04
0.04
0.04
0.04
0.11
0.18
0.18
0.35
0.35
0.05
0.04
0.08
0.16
0.21
0.1
0.1
0.2
0.4
0.4
0.055@5V
0.024@6V
0.054@6V
0.075@6V
0.06@6V
0.11@5V
0.38@5V
0.06@6V
0.09@6V
0.2@5V
R
0.027
0.027
0.036
0.036
4.5V
DS(ON)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-54
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
18.5
115
8.7
5.8
4.6
8.5
75
71
71
48
48
56
56
48
35
35
75
38
60
30
23
23
19
14
27
12
16
41
86
41
72
85
77
30
27
40
23
18
10
= 5V
I
D
43.5
12.8
12.8
45.6
16.4
14.4
9.2
7.3
7.3
5.6
55
51
51
44
44
39
39
32
33
33
40
40
33
28
33
22
22
19
19
14
32
79
37
45
43
35
29
22
9
(A)
MOSFETs
P
D
155
180
155
155
145
146
120
120
167
160
127
107
150
310
220
210
230
135
108
104
180
145
127
150
150
95
85
85
75
75
55
65
65
45
40
40
33
93
75
(W)