FQPF4N25 Fairchild Semiconductor, FQPF4N25 Datasheet - Page 46

• Manufacturer Part Number: FQPF4N25
• Description: MOSFET N-CH 250V 2.8A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF4N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 32W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 32 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 22 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 45 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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TO-220 (Continued)
FDP2532
FDP2552
FQP46N15
HUF75842P3
HUFA75842P3
FDP42AN15A0
FDP2572
FDP2570
FDP120AN15A0
FQP16N15
FQP14N15
FQP9N15
FQP6N15
IRL640A
IRL630A
IRL620A
IRL610A
SSP45N20B
FQP34N20
FQP34N20L
FQP32N20C
IRF650B
HUF75939P3
FDP2670
FQP18N20V2
FQP19N20L
FQP19N20
FQA19N20C
FQP19N20C
IRF640A
IRF640B
FQP10N20C
FQP630
IRF630B
FQP7N20
FQP7N20L
IRF620B
FQP5N20
FQP5N20L
Products
Min. (V)
BV
150
150
150
150
150
150
150
150
150
150
150
150
150
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.016
0.036
0.042
0.042
0.042
0.042
0.056
0.065
0.075
0.075
0.082
0.085
0.125
10V
0.08
0.12
0.16
0.21
0.13
0.14
0.14
0.15
0.17
0.17
0.18
0.36
0.69
0.75
0.4
0.6
0.4
0.4
0.8
1.2
1.2
–
–
–
–
0.024@6V
0.054@6V
0.075@6V
0.06@6V
0.09@6V
0.17@6V
0.18@5V
0.08@5V
0.15@5V
0.78@5V
1.25@5V
R
0.4@5V
0.8@5V
1.5@5V
4.5V
DS(ON)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-41
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Replaced by IRF640B
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
11.2
18.6
10.3
82.5
40.5
40.5
40.5
133
6.5
6.1
6.8
4.8
86
41
85
77
77
30
27
40
23
18
10
40
60
55
95
64
27
20
27
31
45
19
22
12
8
6
= 5V
I
D
45.6
16.4
14.4
19.4
21.8
21.8
6.4
3.3
6.6
6.5
4.5
4.5
79
37
43
43
35
29
22
14
18
35
31
31
28
28
22
19
18
21
19
18
9
9
5
9
9
5
(A)
MOSFETs
P
D
310
150
210
230
230
150
135
108
104
110
176
180
180
156
156
180
140
140
180
139
139
180
93
75
39
93
72
63
52
65
63
69
33
78
63
47
52
–
(W)