FQPF4N25 Fairchild Semiconductor, FQPF4N25 Datasheet - Page 146
FQPF4N25
Manufacturer Part Number
FQPF4N25
Description
MOSFET N-CH 250V 2.8A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF4N25.pdf
(214 pages)
Specifications of FQPF4N25
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
32W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.8 A
Power Dissipation
32 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
22 ns
Minimum Operating Temperature
- 55 C
Rise Time
45 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF4N25
Manufacturer:
FAIRCHILD
Quantity:
12 500
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Bridge Rectifiers (Continued)
GBPC2510
GBPC35005
GBPC3501
GBPC3502
GBPC3504
GBPC3506
GBPC3508
GBPC3510
GGBU4A
GBU4B
GBU4D
GBU4G
GBU4J
GBU4K
GBU4M
GBU6A
GBU6B
GBU6D
GBU6G
GBU6J
GBU6K
GBU6M
GBU8A
GBU8B
GBU8D
GBU8G
GBU8J
GBU8K
KBL005
KBL01
KBL02
KBL04
KBL06
GBU
KBL
Products
V
RRM
1000
1000
1000
1000
100
200
400
600
800
100
200
400
600
800
100
200
400
600
800
100
200
400
600
800
100
200
400
600
50
50
50
50
50
(V)
I
F(AV)
25
35
35
35
35
35
35
35
2-141
4
4
4
4
4
4
4
6
6
6
6
6
6
6
8
8
8
8
8
8
4
4
4
4
4
(A)
Discrete Power Products –
V
FM
Max (V)
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Diodes and Rectifiers
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