FQPF4N25 Fairchild Semiconductor, FQPF4N25 Datasheet - Page 9
FQPF4N25
Manufacturer Part Number
FQPF4N25
Description
MOSFET N-CH 250V 2.8A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF4N25.pdf
(214 pages)
Specifications of FQPF4N25
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
32W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.8 A
Power Dissipation
32 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
22 ns
Minimum Operating Temperature
- 55 C
Rise Time
45 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF4N25
Manufacturer:
FAIRCHILD
Quantity:
12 500
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SC70-6
FDG6335N
FDG6317NZ
FDG327N
FDG327NZ
FDG329N
FDG311N
FDG6303N
FDG6313N
FDG6301N
FDG313N
FDG315N
FDG361N
FDG6332C
FDG6321C
FDG6320C
FDG6322C
FDG316P
FDG6304P
FDG6302P
FDG314P
FDG6308P
FDG6306P
FDG6318P
FDG6318PZ
FDG326P
FDG328P
FDG312P
DG318P
FDG6316P
FDG330P
SC70-6 N-Channel
SC70-6 Complementary N- and P-Channel
SC70-6 P-Channel
Products
Min. (V)
20 | -20
25 | -25
25 | -25
25 | -25
BV
100
-30
-25
-25
-25
-20
-20
-20
-20
-20
-20
-20
-20
-12
-12
20
20
20
20
20
20
25
25
25
25
30
DSS
Complementary
Complementary
Complementary
Complementary
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
10V
0.12
0.19
0.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.3 | 0.42
0.45 | 1.1
0.55@6V
4 | 1.1
0.115
4 | 10
0.145
4.5V
R
0.09
0.09
0.09
0.45
0.45
0.45
0.16
0.42
0.78
0.78
0.14
0.18
0.27
0.11
0.3
0.4
0.3
1.1
1.1
0.4
10
4
DS(ON)
Max (Ω) @ V
2-4
0.6@2.7V | 1.5@2.7V
5@2.7V | 1.5@2.7V
5@2.7V | 13@2.7V
0.6@2.7V
0.6@2.7V
0.6@2.7V
1.5@2.7V
1.5@2.7V
0.4 | 0.63
13@2.7V
5@2.7V
2.5V
0.115
0.55
0.15
0.55
0.63
0.18
0.21
0.25
0.36
0.15
0.4
0.1
0.1
1.2
1.2
–
–
–
GS
=
Replaced by FDG328P
Bold = New Products (introduced January 2003 or later)
0.215
1.8V
0.14
0.14
0.25
0.65
0.8
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
0.29 | 0.22
g
1.64 | 1.1
1.1 | 1.4
1.1 | 1.4
Typ. (nC)
GS
0.76
1.64
1.64
0.29
1.64
0.22
0.86
1.08
1.1
4.5
4.2
3.3
2.1
3.7
3.5
1.1
1.1
1.8
1.4
4.4
3.7
3.3
1.7
3
5
= 5V
0.22 | 0.14
0.22 | 0.41
0.5 | 0.41
0.7 | 0.6
I
D
0.22
0.95
0.41
0.14
0.65
0.7
0.7
1.5
1.5
1.5
1.9
0.5
0.5
0.6
1.6
0.6
0.6
0.5
0.5
1.5
1.5
1.2
0.7
2
2
(A)
MOSFETs
P
D
0.42
0.42
0.42
0.75
0.75
0.75
0.42
0.75
0.75
0.75
0.75
0.75
0.75
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
(W)
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