PSMN1R5-25YL,115 NXP Semiconductors, PSMN1R5-25YL,115 Datasheet - Page 6

• Manufacturer Part Number: PSMN1R5-25YL,115
• Description: MOSFET N-CH 25V 100A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN1R5-25YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 76nC @ 10V
• Input Capacitance (ciss) @ Vds: 4830pF @ 12V
• Power - Max: 109W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 mOhms
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 100 A
• Power Dissipation: 109 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4907-2; 934063451115

NXP Semiconductors
Table 6.
PSMN1R5-25YL_1
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
180
g
150
120
(A)
I
80
60
40
20
fs
90
60
30
D
0
0
function of gate-source voltage; typical values
drain current; typical values
Transfer characteristics: drain current as a
Forward transconductance as a function of
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
1
T
20
j
= 150 ˚C
[1]
…continued
Tested to JEDEC standards where applicable.
2
40
Conditions
I
see
I
V
S
S
25 ˚C
DS
= 25 A; V
= 20 A; dI
3
Figure 17
= 20 V
I
V
D
003aac903
003aac909
GS
(A)
(V)
GS
60
S
4
Rev. 01 — 16 June 2009
/dt = -100 A/µs; V
= 0 V; T
j
= 25 °C;
Fig 6.
Fig 8.
R
(mΩ)
(A)
GS
DSon
I
180
150
120
D
4
3
2
1
0
90
60
30
0
= 0 V;
0
function of drain-source voltage; typical values
of drain current; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
0
10
3.6
3.4
4
3.2
N-channel TrenchMOS logic level FET
2
50
PSMN1R5-25YL
4
Min
-
-
-
6
100
Typ
0.78
43
50
V
GS
V
GS
(V) = 2.4
© NXP B.V. 2009. All rights reserved.
(V) = 3.4
8
I
D
003aac902
003aac910
V
(A)
Max
1.2
-
-
DS
10
2.8
2.6
(V)
4
3
150
10
Unit
V
ns
nC
6 of 13