PSMN1R5-25YL,115 NXP Semiconductors, PSMN1R5-25YL,115 Datasheet - Page 3

• Manufacturer Part Number: PSMN1R5-25YL,115
• Description: MOSFET N-CH 25V 100A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN1R5-25YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 76nC @ 10V
• Input Capacitance (ciss) @ Vds: 4830pF @ 12V
• Power - Max: 109W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 mOhms
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 100 A
• Power Dissipation: 109 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4907-2; 934063451115

NXP Semiconductors
PSMN1R5-25YL_1
Product data sheet
Fig 1.
Fig 3.
10
10
10
(A)
250
200
150
100
I
(A)
10
D
I
50
D
4
3
2
1
10
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
(1)
50
Limit R
100
(1)
DSon
= V
150
DS
T
/ I
003aac900
mb
D
1
(°C)
200
Rev. 01 — 16 June 2009
Fig 2.
P
(%)
der
120
80
40
DC
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
N-channel TrenchMOS logic level FET
50
PSMN1R5-25YL
100
V
DS
(V)
100 μs
1 ms
10 ms
100 ms
10 μs
150
© NXP B.V. 2009. All rights reserved.
T
003aac901
mb
03aa15
(°C)
10
200
2
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