PSMN1R5-25YL,115 NXP Semiconductors, PSMN1R5-25YL,115 Datasheet - Page 2

• Manufacturer Part Number: PSMN1R5-25YL,115
• Description: MOSFET N-CH 25V 100A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN1R5-25YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 76nC @ 10V
• Input Capacitance (ciss) @ Vds: 4830pF @ 12V
• Power - Max: 109W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 mOhms
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 100 A
• Power Dissipation: 109 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4907-2; 934063451115

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN1R5-25YL_1
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN1R5-25YL
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
Symbol
S
S
S
G
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
LFPAK
Package
Name
Description
source
source
source
gate
mounting base; connected to
drain
[1]
Continuous current is limited by package.
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads
Conditions
T
T
V
V
t
T
T
t
V
R
p
p
j
j
mb
mb
GS
GS
GS
GS
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≥ 25 °C; T
= 25 °C; see
= 25 °C;
= 10 V; T
= 10 V; T
= 10 V; T
= 50 Ω; unclamped
j
j
Rev. 01 — 16 June 2009
≤ 150 °C
≤ 150 °C; R
mb
mb
j(init)
= 100 °C; see
= 25 °C; see
Figure 2
= 25 °C; I
mb
mb
= 25 °C; see
= 25 °C
Simplified outline
GS
D
= 20 kΩ
= 100 A; V
Figure 1
Figure 1
(LFPAK)
SOT669
1 2 3 4
Figure 3
mb
sup
N-channel TrenchMOS logic level FET
≤ 25 V;
PSMN1R5-25YL
[1]
[1]
[1]
Graphic symbol
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
G
mbb076
© NXP B.V. 2009. All rights reserved.
Max
25
25
20
100
100
815
109
150
150
100
815
290
SOT669
D
Version
S
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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