PSMN1R5-30YL,115 NXP Semiconductors, PSMN1R5-30YL,115 Datasheet
PSMN1R5-30YL,115
Specifications of PSMN1R5-30YL,115
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PSMN1R5-30YL,115 Summary of contents
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... PSMN1R5-30YL N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK Rev. 01 — 9 April 2010 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
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... Ω; unclamped avalanche energy R GS Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL Min = Figure °C; - j(init) ≤ sup Graphic symbol G mbb076 © NXP B.V. 2010. All rights reserved. ...
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... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° see Figure ° 100 A; GS j(init) D ≤ Ω; unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL Min Typ Max - - - [ 100 [ 100 - - 790 - - 109 -55 - 175 ...
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... T (°C) mb Fig ( All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL 100 150 Normalized total power dissipation as a function of mounting base temperature 003aac266 (1) (2) ( (ms) AL © NXP B.V. 2010. All rights reserved. 03aa16 200 T (° ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN1R5-30YL Product data sheet N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK = DSon DS D (1) 1 Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL 10 μs 100 μ 100 (V) DS Min Typ - 0 ...
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... Figure 15; see Figure 4 see Figure 4 see Figure 15; see Figure see Figure 15; DS see Figure MHz °C; see Figure 17 j All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL Min Typ = 1.3 1 1.3 - 0. 36 ...
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... R G(ext ° see Figure /dt = -100 A/µ 003aac449 ( 2.8 2.6 2.4 2 (V) DS Fig 7. All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL Min Typ = 4 0. DSon (mΩ ( 100 150 Drain-source on-state resistance as a function of drain current ...
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... Input and reverse transfer capacitances as a function of gate-source voltage; typical values 003aac451 ( (V) GS Fig 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL 003aac455 C iss C rss 003aad113 = 175 ° ° ...
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... V GS (th) (V) typ max Fig 13. Gate-source threshold voltage as a function of 03aa27 120 180 ( ° Fig 15. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL 3 max 2 typ min 120 junction temperature GS(pl) V ...
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... Fig 17. Input, output and reverse transfer capacitances 100 150 ° 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL 6000 C iss C (pF) C oss 4000 2000 C rss function of drain-source voltage; typical values 003aac447 25 ° ...
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... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5 ...
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... PSMN1R5-30YL Product data sheet N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL Supersedes - © NXP B.V. 2010. All rights reserved ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 9 April 2010 Document identifier: PSMN1R5-30YL ...