PSMN1R5-30YL NXP Semiconductors, PSMN1R5-30YL Datasheet

MOSFET,N CH,30V,100A,LFPAK

PSMN1R5-30YL

Manufacturer Part Number
PSMN1R5-30YL
Description
MOSFET,N CH,30V,100A,LFPAK
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN1R5-30YL

Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
1.3mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
SOT-669
Rohs Compliant
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN1R5-30YL
Manufacturer:
NXP
Quantity:
150
Part Number:
PSMN1R5-30YLC
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
PSMN1R5-30YLC
0
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
Table 1.
Symbol
V
P
T
Static characteristics
R
Dynamic characteristics
Q
I
D
j
DS
tot
DSon
GD
Advanced TrenchMOS provides low
RDSon and low gate charge
High efficiency gains in switching
power convertors
DC-to-DC converters
Lithium-ion battery protection
Load switching
PSMN1R5-30YL
N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK
Rev. 01 — 9 April 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
junction
temperature
drain-source
on-state
resistance
gate-drain charge V
Conditions
T
T
Figure 1
T
V
T
V
T
V
Figure 16
j
mb
mb
j
j
GS
GS
GS
DS
≥ 25 °C; T
= 100 °C; see
= 25 °C
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
= 4.5 V; I
= 12 V; see
j
D
D
≤ 175 °C
D
GS
= 15 A;
= 15 A;
= 10 A;
Figure
Figure 14
Figure 2
= 10 V; see
Improved mechanical and thermal
characteristics
LFPAK provides maximum power
density in a Power SO8 package
Motor control
Server power supplies
15; see
[1]
Min
-
-
-
-55
-
-
-
Product data sheet
Typ
-
-
-
-
-
1.3
8.7
Max Unit
30
100
109
175
2.4
1.5
-
V
A
W
°C
mΩ
mΩ
nC

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PSMN1R5-30YL Summary of contents

Page 1

... PSMN1R5-30YL N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK Rev. 01 — 9 April 2010 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...

Page 2

... Ω; unclamped avalanche energy R GS Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL Min = Figure °C; - j(init) ≤ sup Graphic symbol G mbb076 © NXP B.V. 2010. All rights reserved. ...

Page 3

... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° see Figure ° 100 A; GS j(init) D ≤ Ω; unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL Min Typ Max - - - [ 100 [ 100 - - 790 - - 109 -55 - 175 ...

Page 4

... T (°C) mb Fig ( All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL 100 150 Normalized total power dissipation as a function of mounting base temperature 003aac266 (1) (2) ( (ms) AL © NXP B.V. 2010. All rights reserved. 03aa16 200 T (° ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN1R5-30YL Product data sheet N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK = DSon DS D (1) 1 Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL 10 μs 100 μ 100 (V) DS Min Typ - 0 ...

Page 6

... Figure 15; see Figure 4 see Figure 4 see Figure 15; see Figure see Figure 15; DS see Figure MHz °C; see Figure 17 j All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL Min Typ = 1.3 1 1.3 - 0. 36 ...

Page 7

... R G(ext ° see Figure /dt = -100 A/µ 003aac449 ( 2.8 2.6 2.4 2 (V) DS Fig 7. All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL Min Typ = 4 0. DSon (mΩ ( 100 150 Drain-source on-state resistance as a function of drain current ...

Page 8

... Input and reverse transfer capacitances as a function of gate-source voltage; typical values 003aac451 ( (V) GS Fig 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL 003aac455 C iss C rss 003aad113 = 175 ° ° ...

Page 9

... V GS (th) (V) typ max Fig 13. Gate-source threshold voltage as a function of 03aa27 120 180 ( ° Fig 15. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL 3 max 2 typ min 120 junction temperature GS(pl) V ...

Page 10

... Fig 17. Input, output and reverse transfer capacitances 100 150 ° 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL 6000 C iss C (pF) C oss 4000 2000 C rss function of drain-source voltage; typical values 003aac447 25 ° ...

Page 11

... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5 ...

Page 12

... PSMN1R5-30YL Product data sheet N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL Supersedes - © NXP B.V. 2010. All rights reserved ...

Page 13

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL © NXP B.V. 2010. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 9 April 2010 PSMN1R5-30YL Trademarks © NXP B.V. 2010. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 9 April 2010 Document identifier: PSMN1R5-30YL ...

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