PSMN1R5-25YL,115 NXP Semiconductors, PSMN1R5-25YL,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN1R5-25YL,115
• Description: MOSFET N-CH 25V 100A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN1R5-25YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 76nC @ 10V
• Input Capacitance (ciss) @ Vds: 4830pF @ 12V
• Power - Max: 109W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 mOhms
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 100 A
• Power Dissipation: 109 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4907-2; 934063451115

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN1R5-25YL_1
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
10
10
10
th(j-mb)
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
Thermal characteristics
0.1
0.2
0.05
0.02
single shot
Parameter
thermal resistance from
junction to mounting
base
10
-5
Conditions
see
Figure 4
10
-4
Rev. 01 — 16 June 2009
10
-3
10
N-channel TrenchMOS logic level FET
-2
PSMN1R5-25YL
Min
-
P
10
-1
t
Typ
0.5
p
T
t
p
© NXP B.V. 2009. All rights reserved.
(s)
δ =
003aac456
Max
1.1
T
t
p
t
1
Unit
K/W
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