PSMN1R5-25YL NXP Semiconductors, PSMN1R5-25YL Datasheet
PSMN1R5-25YL
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PSMN1R5-25YL Summary of contents
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... PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 — 16 June 2009 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits ...
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... Figure °C; mb ≤ 10 µs; pulsed ° ° 100 j(init Ω; unclamped R GS Rev. 01 — 16 June 2009 PSMN1R5-25YL N-channel TrenchMOS logic level FET Graphic symbol mbb076 Version SOT669 Min Max - -20 20 [1] - 100 ...
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... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature = Rev. 01 — 16 June 2009 PSMN1R5-25YL N-channel TrenchMOS logic level FET 03aa15 50 100 150 200 T (°C) mb 003aac901 10 μs 100 μ 100 ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN1R5-25YL_1 Product data sheet Conditions see Figure Rev. 01 — 16 June 2009 PSMN1R5-25YL N-channel TrenchMOS logic level FET Min Typ Max - 0.5 1.1 003aac456 δ ...
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... Figure 14; see Figure see Figure MHz °C; see Figure 0.5 Ω 4 4.7 Ω R G(ext) Rev. 01 — 16 June 2009 PSMN1R5-25YL N-channel TrenchMOS logic level FET Min Typ Max 1.3 1.7 2. 100 - ...
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... Output characteristics: drain current as a function of drain-source voltage; typical values 003aac909 4 R DSon (mΩ (A) D Fig 8. Drain-source on-state resistance as a function of drain current; typical values Rev. 01 — 16 June 2009 PSMN1R5-25YL N-channel TrenchMOS logic level FET Min Typ Max - 0.78 1 003aac902 10 4 3.6 3.4 3.2 2.8 2 ...
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... V GS (th) (V) 2 max typ 2.5 -60 V (V) GS Fig 12. Gate-source threshold voltage as a function of junction temperature Rev. 01 — 16 June 2009 PSMN1R5-25YL N-channel TrenchMOS logic level FET 003aac907 C iss C rss (V) GS 003a a c337 max typ min 0 60 120 T (° ...
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... C (pF) 4000 = 2000 (nC) G Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 01 — 16 June 2009 PSMN1R5-25YL N-channel TrenchMOS logic level FET GS(pl) V GS(th GS1 GS2 ...
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... Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN1R5-25YL_1 Product data sheet 100 150 ° 0.2 0.4 0.6 0.8 Rev. 01 — 16 June 2009 PSMN1R5-25YL N-channel TrenchMOS logic level FET 003aac905 25 ° (V) SD © NXP B.V. 2009. All rights reserved ...
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... D 1 (1) ( max 4.41 2.2 0.9 0.25 0.30 4.10 5.0 4.20 3.62 2.0 0.7 0.19 0.24 3.80 4.8 REFERENCES JEDEC JEITA MO-235 Rev. 01 — 16 June 2009 PSMN1R5-25YL N-channel TrenchMOS logic level FET detail ( 3.3 6.2 0.85 1.3 1.3 1.27 0.25 3.1 5.8 0.40 0.8 0.8 EUROPEAN ISSUE DATE ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN1R5-25YL_1 20090616 PSMN1R5-25YL_1 Product data sheet N-channel TrenchMOS logic level FET Data sheet status Change notice Product data sheet - Rev. 01 — 16 June 2009 PSMN1R5-25YL Supersedes - © NXP B.V. 2009. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 16 June 2009 PSMN1R5-25YL N-channel TrenchMOS logic level FET © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN1R5-25YL_1 All rights reserved. Date of release: 16 June 2009 ...