FDR8508P Fairchild Semiconductor, FDR8508P Datasheet - Page 82
FDR8508P
Manufacturer Part Number
FDR8508P
Description
MOSFET P-CH 30V 3A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR8508P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
52 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Input Capacitance (ciss) @ Vds
750pF @ 15V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDR8508P
Manufacturer:
FSC
Quantity:
20 000
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Bipolar Power Transistors – Darlington Transistors
Products
TO-126 NPN Configuration
KSD985
KSD986
KSD1692
BD675A
BD677A
KSE800
KSE801
MJE800
MJE801
BD679A
KSE802
KSE803
MJE802
MJE803
BD681
TO-126 PNP Configuration
KSB794
KSB795
KSB1149
BD676A
BD678A
KSE700
KSE701
MJE700
MJE701
BD680A
KSE702
KSE703
MJE702
MJE703
BD682
TO-220 NPN Configuration
TIP110
TIP111
I
C
1.5
1.5
1.5
1.5
3
4
4
4
4
4
4
4
4
4
4
4
4
3
4
4
4
4
4
4
4
4
4
4
4
4
2
2
(A)
V
CEO
100
100
100
100
60
80
45
60
60
60
60
60
80
80
80
80
80
60
80
45
60
60
60
60
60
80
80
80
80
80
60
80
(V) V
CBO
150
150
150
100
100
100
45
60
60
60
60
60
80
80
80
80
80
60
80
45
60
60
60
60
60
80
80
80
80
80
60
80
(V) V
EBO
8
8
8
5
5
5
5
5
5
5
5
5
5
5
5
8
8
8
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V)
P
C
10
10
15
14
14
14
14
14
14
14
14
14
14
14
14
10
10
15
14
14
14
14
14
14
14
14
14
14
14
14
50
50
(W)
2000
2000
2000
2000
2000
2000
Min
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
500
500
2-77
Discrete Power Products –
30000
30000
20000
30000
30000
20000
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@I
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
C
1
1
2
2
2
2
2
2
2
1
1
2
2
2
2
2
2
2
2
2
(A) @V
Bold = New Products (introduced January 2003 or later)
CE
2
2
2
3
3
3
3
3
3
3
3
3
3
3
3
2
2
2
3
3
3
3
3
3
3
3
3
3
3
3
4
4
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.9
0.9
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.5
1.5
1.2
2.8
2.8
2.5
2.8
2.5
2.8
2.8
2.5
2.8
2.5
2.8
2.5
1.5
1.5
1.2
2.8
2.8
2.5
2.8
2.5
2.8
2.8
2.5
2.8
2.5
2.8
2.5
2.5
2.5
V
CE
(sat)
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
C
1
1
2
2
2
2
2
2
2
1
1
2
2
2
2
2
2
2
2
2
(A) @I
0.001
0.001
0.002
0.001
0.001
0.002
0.008
0.008
0.04
0.04
0.04
0.04
0.04
0.03
0.04
0.03
0.04
0.03
0.04
0.04
0.04
0.04
0.04
0.03
0.04
0.03
0.04
0.03
0.03
0.03
0.03
0.03
B
(A)
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