FDR8508P Fairchild Semiconductor, FDR8508P Datasheet - Page 210

• Manufacturer Part Number: FDR8508P
• Description: MOSFET P-CH 30V 3A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR8508P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 750pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Discrete
Discrete IGBT (SMPS II)
FG H
30
(Continued)
N 6
S
2
D
D: Integral Reverse Diode
i.e., 2 = SMPS II (UIS, LGC, LVp)
S: SMPS
M: Motor Drive
I: Induction Heating
C: Camera Flash
i.e., (600)
N-Channel or P-Channel
D: 3 Lead TO-252
B: 3 Lead TO-263
P: 3 Lead TO-220
H: 3 Lead TO-247
L: 3 Lead TO-264
J: 3 Lead TO-268
K: 3 Lead TO-247ST
Options
General Application
Intended Application
Voltage Breakdown/100
Polarity
Relative Die Size
Package
Fairchild IGBT
8-17
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