FDR8508P Fairchild Semiconductor, FDR8508P Datasheet - Page 40

• Manufacturer Part Number: FDR8508P
• Description: MOSFET P-CH 30V 3A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR8508P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 750pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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DIP-8
FQG4902
FQG4904
DIP-8 Complementary N- and P-Channel
Product
250 | -250
400 | -400
Min. (V)
BV
DSS
Complementary
Complementary
Config.
10V
2 | 2
3 | 3
R
DS(ON)
4.5V
–
–
Max (Ω) @ V
2-35
2.5V
–
–
GS
=
1.8V
–
–
Discrete Power Products –
Q
@V
g
7.6 | 20
Typ. (nC)
6 | 12
GS
= 5V
0.54 | 0.54
0.46 | 0.46
I
D
(A)
MOSFETs
P
D
1.4
1.6
(W)