FDR8508P Fairchild Semiconductor, FDR8508P Datasheet - Page 8
FDR8508P
Manufacturer Part Number
FDR8508P
Description
MOSFET P-CH 30V 3A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR8508P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
52 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Input Capacitance (ciss) @ Vds
750pF @ 15V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDR8508P
Manufacturer:
FSC
Quantity:
20 000
- Current page: 8 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
BGA
1.5x1.5 mm
FDZ298N
2.0x2.0 mm
FDZ203N
2.0x2.5 mm
FDZ201N
FDZ209N
2.5x4.0 mm
FDZ2553N
FDZ2553NZ
FDZ2551N
3.5x4.0 mm
FDZ7064N
FDZ7064S
5.0x5.5 mm
FDZ5047N
1.5x1.5 mm
FDZ299P
2.0x2.0 mm
FDZ204P
2.0x2.5 mm
FDZ202P
2.5x4.0 mm
FDZ2554P
FFDZ2554PZ
FDZ2552P
3.5x4.0 mm
FDZ208P
FDZ206P
BGA N-Channel
BGA P-Channel
Products
Min. (V)
BV
-20
-20
-20
-20
-20
-20
-30
-20
20
20
20
60
20
20
20
30
30
30
DSS
Monolithic Common
Monolithic Common
Monolithic Common
Monolithic Common
Monolithic Common
Monolithic Common
Config.
SyncFET
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Drain
Drain
Drain
Drain
Drain
Drain
0.0029
0.0105
0.007
0.007
10V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
R
DS(ON)
0.08@5V
0.0045
0.0165
0.0095
0.027
0.018
0.018
0.014
0.014
0.018
0.008
0.009
0.055
0.045
0.045
0.028
0.028
0.045
4.5V
Max (Ω) @ V
2-3
0.0145
2.5V
0.039
0.075
0.075
0.045
0.045
0.075
0.03
0.03
0.02
0.02
0.03
0.08
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.3
6.6
11
11
12
13
11
31
25
52
14
15
25
38
7
9
9
9
= 5V
I
D
13.5
13.5
12.5
7.5
9.6
9.6
4.6
4.5
5.5
6.5
6.5
5.5
22
13
6
9
4
9
(A)
MOSFETs
P
D
1.7
1.6
2.1
2.1
2.1
2.2
2.2
2.8
1.7
1.8
2.1
2.1
2.1
2.2
2.2
2
2
2
(W)
Related parts for FDR8508P
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: